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参数资料
| 型号： | H3101B |
| 厂商： | Intersil Corporation |
| 英文描述： | Gilbert Cell UHF Transistor Array |
| 中文描述： | 吉尔伯特细胞超高频晶体管阵列 |
| 文件页数： | 12/12页 |
| 文件大小： | 905K |
| 代理商： | H3101B |
12
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reli-
able. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
Die Characteristics
PROCESS
UHF-1
DIE DIMENSIONS:
53 mils x 52 mils x 14 mils
1340
μ
m x 1320
μ
m x 355.6
μ
m
METALLIZATION:
Type: Metal 1: AlCu(2%)/TiW
Thickness: Metal 1: 8k
±
0.5k
Type: Metal 2: AlCu(2%)
Thickness: Metal 2: 16k
±
0.8k
PASSIVATION:
Type: Nitride
Thickness: 4k
±
0.5k
SUBSTRATE POTENTIAL (Powered Up):
Floating
Metallization Mask Layout
HFA3101
1
1
2
2
3
3
4
4
5
5
6
6
7
7
8
8
HFA3101
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