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参数资料
| 型号： | HAT1025R |
| 厂商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel Power MOS FET(P沟道功率MOSFET) |
| 中文描述： | 硅P通道功率MOS FET性（P沟道功率MOSFET的） |
| 文件页数： | 2/10页 |
| 文件大小： | 76K |
| 代理商： | HAT1025R |
HAT1025R
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
–20
V
Gate to source voltage
±
10
–4.5
V
Drain current
A
Drain peak current
Note1
–36
A
Body–drain diode reverse drain current I
DR
Channel dissipation
–4.5
A
Pch
Note2
2
W
Channel dissipation
Pch
Note3
3
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10s
Tstg
–55 to +150
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PDF描述 |
|---|---|
| HAT1026R | Silicon P Channel Power MOS FET(P沟道功率MOSFET) |
| HAT1029R | Silicon P Channel Power MOS FET High Speed Power Switching |
| HAT1030T | Silicon P Channel Power MOS FET(P沟道功率MOSFET) |
| HAT1031T | Silicon P Channel Power MOS FET High Speed Power Switching |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HAT1025R-EL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel Power MOS FET High Speed Power Switching |
| HAT1026R | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET P-CH 30V 7A 8SOP - Tape and Reel |
| HAT1026R-EL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel Power MOSFET High Speed Power Switching |
| HAT1029R | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel Power MOS FET High Speed Power Switching |
| HAT1030T | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 12V V(BR)DSS | 3A I(D) | SO |
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