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参数资料
| 型号： | HCPL-315J-XXXE |
| 英文描述： | 0.5 Amp Output Current IGBT Gate Drive Optocoupler |
| 中文描述： | 0.5安培输出电流IGBT栅极驱动光电耦合器 |
| 文件页数： | 16/21页 |
| 文件大小： | 488K |
| 代理商： | HCPL-315J-XXXE |
16
The value of 4.25 mA for I
CC
in
the previous equation was
obtained by derating the I
CC
max
of 5 mA (which occurs at -40
°
C)
to I
CC
max at 90
°
C (see Figure 7).
Since P
O
for this case is greater
than P
O(MAX)
, Rg must be
increased to reduce the HCPL-
3150 power dissipation.
P
O(SWITCHING MAX)
= P
O(MAX)
- P
O(BIAS)
= 154 mW - 85 mW
= 69 mW
P
O(SWITCHINGMAX)
f
E
SW(MAX)
= –––––––––––––––
69 mW
= ––––––– = 3.45
μ
J
20 kHz
For Qg = 500 nC, from Figure
27, a value of E
SW
= 3.45
μ
J
gives a Rg = 41
.
Thermal Model
(HCPL-3150)
The steady state thermal model
for the HCPL-3150 is shown in
Figure 28a. The thermal
resistance values given in this
model can be used to calculate
the temperatures at each node for
a given operating condition. As
shown by the model, all heat
generated flows through
θ
CA
which raises the case temperature
T
C
accordingly. The value of
θ
CA
depends on the conditions of the
board design and is, therefore,
determined by the designer. The
value of
θ
CA
= 83
°
C/W was
obtained from thermal measure-
ments using a 2.5 x 2.5 inch PC
board, with small traces (no
ground plane), a single HCPL-
3150 soldered into the center of
the board and still air. The
absolute maximum power
dissipation derating specifications
assume a
θ
CA
value of 83
°
C/W.
From the thermal mode in Figure
28a the LED and detector IC
junction temperatures can be
expressed as:
T
JE
= P
E
(
θ
LC
||(
θ
LD
+
θ
DC
) +
θ
CA
)
θ
θ
θ
LC
+
θ
DC
+
θ
LD
+ P
D
(
––––––––––––––––
+
θ
CA
)
+
T
A
θ
θ
LC
+
θ
DC
+
θ
LD
T
JD
=
P
E
(
––––––––––––––– +
θ
CA
)
+
P
D
(
θ
DC
||(
θ
LD
+
θ
LC
) +
θ
CA
) +
T
A
Inserting the values for
θ
LC
and
θ
DC
shown in Figure 28 gives:
T
JE
= P
E
(230
°
C/W +
θ
CA
)
+ P
D
(49
°
C/W +
θ
CA
) +
T
A
T
JD
= P
E
(49
°
C/W +
θ
CA
)
+ P
D
(104
°
C/W +
θ
CA
) +
T
A
T
JE
= LED junction temperature
T
JD
= detector IC junction temperature
T
C
= case temperature measured at the center of the package bottom
θ
LC
= LED-to-case thermal resistance
θ
LD
= LED-to-detector thermal resistance
θ
DC
= detector-to-case thermal resistance
θ
CA
= case-to-ambient thermal resistance
θ
CA
will depend on the board design and the placement of the part.
Figure 28a. Thermal Model.
θ
LD
= 439
°
C/W
T
JE
T
JD
θ
LC
= 391
°
C/W
θ
DC
= 119
°
C/W
θ
CA
= 83
°
C/W*
T
C
T
A
For example, given P
E
= 45 mW,
P
O
= 250 mW, T
A
= 70
°
C and
θ
CA
= 83
°
C/W:
T
JE
= P
E
313
°
C/W + P
D
132
°
C/W +
T
A
= 45 mW
313
°
C/W + 250 m
W
132
°
C/W + 70
°
C = 117
°
C
T
JD
= P
E
132
°
C/W + P
D
187
°
C/W +
T
A
= 45 mW
132C/W + 250 m
W
187
°
C/W + 70
°
C = 123
°
C
T
JE
and T
JD
should be limited to
125
°
C based on the board layout
and part placement (
θ
CA
) specific
to the application.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HCPL-316J | 功能描述:逻辑输出光电耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Fairchild Semiconductor 绝缘电压:4243 Vrms 输出类型:Push-Pull 最大传播延迟时间:500 ns 最大正向二极管电压: 最大反向二极管电压: 最大正向二极管电流: 最大连续输出电流:2.5 A 最大功率耗散:100 mW 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:SO-16 封装:Tube |
| HCPL-316J#500 | 功能描述:逻辑输出光电耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Fairchild Semiconductor 绝缘电压:4243 Vrms 输出类型:Push-Pull 最大传播延迟时间:500 ns 最大正向二极管电压: 最大反向二极管电压: 最大正向二极管电流: 最大连续输出电流:2.5 A 最大功率耗散:100 mW 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:SO-16 封装:Tube |
| HCPL-316J-000E | 功能描述:逻辑输出光电耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Fairchild Semiconductor 绝缘电压:4243 Vrms 输出类型:Push-Pull 最大传播延迟时间:500 ns 最大正向二极管电压: 最大反向二极管电压: 最大正向二极管电流: 最大连续输出电流:2.5 A 最大功率耗散:100 mW 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:SO-16 封装:Tube |
| HCPL-316J-000E | 制造商:Avago Technologies 功能描述:GATE DRIVE OPTOCOUPLERLF - LEAD FREE VE |
| HCPL-316J-500E | 功能描述:逻辑输出光电耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Fairchild Semiconductor 绝缘电压:4243 Vrms 输出类型:Push-Pull 最大传播延迟时间:500 ns 最大正向二极管电压: 最大反向二极管电压: 最大正向二极管电流: 最大连续输出电流:2.5 A 最大功率耗散:100 mW 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:SO-16 封装:Tube |
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