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参数资料
| 型号： | HCPL-315J-XXXE |
| 英文描述： | 0.5 Amp Output Current IGBT Gate Drive Optocoupler |
| 中文描述： | 0.5安培输出电流IGBT栅极驱动光电耦合器 |
| 文件页数： | 18/21页 |
| 文件大小： | 488K |
| 代理商： | HCPL-315J-XXXE |
18
CMR with the LED On
(CMR
H
)
A high CMR LED drive circuit
must keep the LED on during
common mode transients. This is
achieved by overdriving the LED
current beyond the input
threshold so that it is not pulled
below the threshold during a
transient. A minimum LED cur-
rent of 10 mA provides adequate
margin over the maximum I
FLH
of
5 mA to achieve 15 kV/
μ
s CMR.
CMR with the LED Off
(CMR
L
)
A high CMR LED drive circuit
must keep the LED off
(V
F
≤
V
F(OFF)
) during common
mode transients. For example,
during a -dV
CM
/dt transient in
Figure 31, the current flowing
through C
LEDP
also flows through
the R
SAT
and V
SAT
of the logic
gate. As long as the low state
voltage developed across the
Figure 27. Energy Dissipated in the
HCPL-3150 for Each IGBT Switching
Cycle.
E
–
–
0
0
Rg
–
GATE RESISTANCE
–
100
3
20
7
40
2
60
80
6
Qg = 100 nC
Qg = 250 nC
Qg = 500 nC
5
4
1
V
CC
= 19 V
V
EE
= -9 V
LED Drive Circuit
Considerations for Ultra
High CMR Performance
Without a detector shield, the
dominant cause of optocoupler
CMR failure is capacitive
coupling from the input side of
the optocoupler, through the
package, to the detector IC as
shown in Figure 29. The HCPL-
3150/315J improves CMR
performance by using a detector
IC with an optically transparent
Faraday shield, which diverts the
capacitively coupled current away
from the sensitive IC circuitry.
How ever, this shield does not
eliminate the capacitive coupling
between the LED and optocoup-
ler pins 5-8 as shown in
Figure 30. This capacitive
coupling causes perturbations in
the LED current during common
mode transients and becomes the
major source of CMR failures for
a shielded optocoupler. The main
design objective of a high CMR
LED drive circuit becomes
keeping the LED in the proper
state (on or off) during common
mode transients. For example,
the recommended application
circuit (Figure 25), can achieve
15 kV/
μ
s CMR while minimizing
component complexity.
Techniques to keep the LED in
the proper state are discussed in
the next two sections.
logic gate is less than V
F(OFF)
, the
LED will remain off and no
common mode failure will occur.
The open collector drive circuit,
shown in Figure 32, cannot keep
the LED off during a +dV
CM
/dt
transient, since all the current
flowing through C
LEDN
must be
supplied by the LED, and it is not
recommended for applications
requiring ultra high CMR
L
performance. Figure 33 is an
alternative drive circuit which,
like the recommended application
circuit (Figure 25), does achieve
ultra high CMR performance by
shunting the LED in the off state.
Under Voltage Lockout
Feature
The HCPL-3150/315J contains an
under voltage lockout (UVLO)
feature that is designed to protect
the IGBT under fault conditions
which cause the HCPL-3150/315J
supply voltage (equivalent to the
fully-charged IGBT gate voltage)
to drop below a level necessary to
keep the IGBT in a low resistance
state. When the HCPL-3150/315J
output is in the high state and the
supply voltage drops below the
HCPL-3150/315J V
UVLO-
threshold
(9.5 <V
UVLO-
<12.0), the
optocoupler output will go into
the low state with a typical delay,
UVLO Turn Off Delay, of 0.6
μ
s.
When the HCPL-3150/315J
output is in the low state and the
supply voltage rises above the
HCPL-3150/315J V
UVLO+
threshold (11.0 < V
UVLO+
< 13.5),
the optocoupler will go into the
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HCPL-316J | 功能描述:逻辑输出光电耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Fairchild Semiconductor 绝缘电压:4243 Vrms 输出类型:Push-Pull 最大传播延迟时间:500 ns 最大正向二极管电压: 最大反向二极管电压: 最大正向二极管电流: 最大连续输出电流:2.5 A 最大功率耗散:100 mW 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:SO-16 封装:Tube |
| HCPL-316J#500 | 功能描述:逻辑输出光电耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Fairchild Semiconductor 绝缘电压:4243 Vrms 输出类型:Push-Pull 最大传播延迟时间:500 ns 最大正向二极管电压: 最大反向二极管电压: 最大正向二极管电流: 最大连续输出电流:2.5 A 最大功率耗散:100 mW 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:SO-16 封装:Tube |
| HCPL-316J-000E | 功能描述:逻辑输出光电耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Fairchild Semiconductor 绝缘电压:4243 Vrms 输出类型:Push-Pull 最大传播延迟时间:500 ns 最大正向二极管电压: 最大反向二极管电压: 最大正向二极管电流: 最大连续输出电流:2.5 A 最大功率耗散:100 mW 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:SO-16 封装:Tube |
| HCPL-316J-000E | 制造商:Avago Technologies 功能描述:GATE DRIVE OPTOCOUPLERLF - LEAD FREE VE |
| HCPL-316J-500E | 功能描述:逻辑输出光电耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Fairchild Semiconductor 绝缘电压:4243 Vrms 输出类型:Push-Pull 最大传播延迟时间:500 ns 最大正向二极管电压: 最大反向二极管电压: 最大正向二极管电流: 最大连续输出电流:2.5 A 最大功率耗散:100 mW 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:SO-16 封装:Tube |
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