- 您现在的位置：买卖IC网 > PDF目录371778 > HCPL-3180-300 Current, High Speed IGBT/MOSFET Gate Drive Optocoupler PDF资料下载
参数资料
| 型号： | HCPL-3180-300 |
| 英文描述： | Current, High Speed IGBT/MOSFET Gate Drive Optocoupler |
| 中文描述： | 当前，高速式IGBT / MOSFET的门极驱动光电耦合器 |
| 文件页数： | 18/19页 |
| 文件大小： | 466K |
| 代理商： | HCPL-3180-300 |
18
To minimize dead time in a
given design, the turn on of
LED2 should be delayed
(relative to the turn off of LED1)
so that under worst-case
conditions, transistor Q1 has
just turned off when transistor
Q2 turns on, as shown in Figure
35. The amount of delay
necessary to achieve this
condition is equal to the
maximum value of the
propagation delay difference
specification, PDD
MAX
, which is
specified to be 90 ns over the
operating temperature range of
-40 °C to +100 °C.
Delaying the LED signal by the
maximum propagation delay
difference ensures that the
minimum dead time is zero, but
it does not tell a designer what
the maximum dead time will be.
The maximum dead time is
equivalent to the difference
between the maximum and
minimum propagation delay
difference specification as
shown in Figure 36. The
maximum dead time for the
HCPL-3180 is 180 ns (= 90 ns-(-
90 ns)) over the operating
temperature range of –40 °C to
+100 °C.
Note that the propagation delays
used to calculate PDD and dead
time are taken at equal
temperatures and test
conditions since the
optocouplers under
consideration are typically
mounted in close proximity to
each other and are switching
identical IGBTs.
Figure 36. Waveforms for Dead Time
相关PDF资料 |
PDF描述 |
|---|---|
| HCPL-3180-500 | Current, High Speed IGBT/MOSFET Gate Drive Optocoupler |
| HCPL-3180 | Current, High Speed IGBT/MOSFET Gate Drive Optocoupler |
| HCPL3180 | Current, High Speed IGBT/MOSFET Gate Drive Optocoupler |
| HCPL-354 | AC Input Phototransistor Optocoupler SMD Mini-Flat Type |
| HCPL-354-000E | AC Input Phototransistor Optocoupler SMD Mini-Flat Type |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HCPL-3180-300E | 功能描述:高速光耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Avago Technologies 电流传递比: 最大波特率: 最大正向二极管电压:1.75 V 最大反向二极管电压:5 V 最大功率耗散:40 mW 最大工作温度:+125 C 最小工作温度:- 40 C 封装 / 箱体:SOIC-5 封装:Tube |
| HCPL-3180-360 | 功能描述:高速光耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Avago Technologies 电流传递比: 最大波特率: 最大正向二极管电压:1.75 V 最大反向二极管电压:5 V 最大功率耗散:40 mW 最大工作温度:+125 C 最小工作温度:- 40 C 封装 / 箱体:SOIC-5 封装:Tube |
| HCPL-3180-360E | 功能描述:高速光耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Avago Technologies 电流传递比: 最大波特率: 最大正向二极管电压:1.75 V 最大反向二极管电压:5 V 最大功率耗散:40 mW 最大工作温度:+125 C 最小工作温度:- 40 C 封装 / 箱体:SOIC-5 封装:Tube |
| HCPL-3180-500 | 功能描述:高速光耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Avago Technologies 电流传递比: 最大波特率: 最大正向二极管电压:1.75 V 最大反向二极管电压:5 V 最大功率耗散:40 mW 最大工作温度:+125 C 最小工作温度:- 40 C 封装 / 箱体:SOIC-5 封装:Tube |
| HCPL-3180-500E | 功能描述:高速光耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Avago Technologies 电流传递比: 最大波特率: 最大正向二极管电压:1.75 V 最大反向二极管电压:5 V 最大功率耗散:40 mW 最大工作温度:+125 C 最小工作温度:- 40 C 封装 / 箱体:SOIC-5 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。