432
Table 19.18
DC Characteristics of Flash Memory
Conditions: V
CC = 2.7 V to 5.5 V
*2, AV
CC = 2.7 V to 5.5 V
*2,V
SS = AVSS = 0 V,
V
PP = 12.0 ± 0.6 V, Ta = –20°C to +75°C (regular specifications), Ta = –40°C to
+85°C (wide-range specifications)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
High-voltage (12 V)
threshold level
* 1
FV
PP, MD1
V
H
V
CC + 2
—
11.4
V
FV
PP current
During read
I
PP
—
10
A
V
PP = 2.7 to 5.5 V
—10
20
mA
V
PP = 12.6 V
During
programming
—20
40
mA
During erasure
—
20
40
mA
Notes: *1 The listed voltages indicate the threshold level at which high-voltage application is
recognized. In boot mode and while flash memory is being programmed or erased, the
applied voltage should be 12.0 V ± 0.6 V.
*2 In the LH version, V
CC = 3.0 V to 5.5 V, AVCC = 3.0 V to 5.5 V
Table 19.19
AC Characteristics of Flash Memory
Conditions: V
CC = 2.7 V to 5.5 V
*5, AV
CC = 2.7 V to 5.5 V
*5, V
SS = AVSS = 0 V,
V
PP = 12.0 ± 0.6 V, Ta = –20°C to +75°C (regular specifications), Ta = –40°C to
+85°C (wide-range specifications)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Programming time
*1, * 2
t
P
—
50
1000
s
Erase time
* 1, * 3
t
E
—
1
30
s
Number of writing/erasing count
N
WEC
—
100
Times
Verify setup time 1
* 1
t
VS1
4
——s
Verify setup time 2
* 1
t
VS2
2
——s
Flash memory read setup time
* 4
t
FRS
50
——s
V
CC ≥ 4.5 V
100
—
V
CC < 4.5 V
Notes: *1 Set the times following the programming/erasing algorithm shown in section 19.
*2 The programming time is the time during which a byte is programmed or the P bit in the
flash memory control register (FLMCR) is set. It does not include the program-verify
time.
*3 The erase time is the time during which all 32-kbyte blocks are erased or the E bit in the
flash memory control register (FLMCR) is set. It does not include the prewrite time
before erasure or erase-verify time.
*4 After power-on when using an external clock source, after return from standby mode, or
after switching the programming voltage (V
PP) from 12 V to VCC, make sure that this read
setup time has elapsed before reading flash memory.
When V
PP is released, the flash memory read setup time is defined as the period from
when the FV
PP pin has reached VCC + 2 V until flash memory can be read.
*5 In the LH version, V
CC = 3.0 V to 5.5 V, AVCC = 3.0 V to 5.5 V.