参数资料
型号: HFA1130IBZ-T
厂商: Intersil
文件页数: 4/13页
文件大小: 0K
描述: IC BUFFER CFA 850MHZ 8-SOIC
标准包装: 2,500
放大器类型: 电流反馈
电路数: 1
转换速率: 2300 V/µs
-3db带宽: 850MHz
电流 - 输入偏压: 25µA
电压 - 输入偏移: 2000µV
电流 - 电源: 21mA
电流 - 输出 / 通道: 60mA
电压 - 电源,单路/双路(±): ±4.5 V ~ 5.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 带卷 (TR)
12
FN3369.5
April 25, 2013
Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted
in the quality certifications found at www.intersil.com/en/support/qualandreliability.html
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time
without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be
accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
For additional products, see www.intersil.com/en/products.html
Die Characteristics
Metallization Mask Layout
HFA1130
DIE DIMENSIONS:
63 mils x 44 mils x 19 mils
1600m x 1130m
METALLIZATION:
Type: Metal 1: AlCu(2%)/TiW
Thickness: Metal 1: 8k
±0.4k
Type: Metal 2: ALCu(2%)
Thickness: Metal 2: 16k
±0.8k
PASSIVATION:
Type: Nitride
Thickness: 4k
±0.5k
TRANSISTOR COUNT:
52
SUBSTRATE POTENTIAL (Powered Up):
Floating (Recommend Connection to V-)
+IN
V-
VL
BAL
OUT
-IN
BAL
VH
V+
HFA1130
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