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参数资料
| 型号： | HFA3101B |
| 厂商： | Intersil |
| 文件页数： | 12/12页 |
| 文件大小： | 0K |
| 描述： | IC TRANSISTOR ARRAY UHF 8-SOIC |
| 标准包装： | 98 |
| 频率： | 0Hz ~ 10GHz |
| 混频器数目： | 1 |
| 噪音数据： | 1.7dB |
| 包装： | 管件 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 产品目录页面： | 1246 (CN2011-ZH PDF) |
HFA3101
Die Characteristics
PROCESS
UHF-1
DIE DIMENSIONS:
53 mils x 52 mils x 14 mils
1340 μ m x 1320 μ m x 355.6 μ m
METALLIZATION:
Type: Metal 1: AlCu(2%)/TiW
Thickness: Metal 1: 8k ? ± 0.5k ?
Type: Metal 2: AlCu(2%)
Thickness: Metal 2: 16k ? ± 0.8k ?
Metallization Mask Layout
HFA3101
PASSIVATION:
Type: Nitride
Thickness: 4k ? ± 0.5k ?
SUBSTRATE POTENTIAL (Powered Up):
Floating
8
8
1
1
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2
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4
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reli-
able. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HFA3101B96 | 功能描述:IC TRANS ARRAY NPN GILBERT 8SOIC RoHS:否 类别:RF/IF 和 RFID >> RF 混频器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:100 系列:- RF 型:W-CDMA 频率:2.11GHz ~ 2.17GHz 混频器数目:1 增益:17dB 噪音数据:2.2dB 次要属性:- 电流 - 电源:11.7mA 电源电压:2.7 V ~ 3.3 V 包装:托盘 封装/外壳:12-VFQFN 裸露焊盘 供应商设备封装:12-QFN-EP（3x3） |
| HFA3101BZ | 功能描述:射频双极小信号晶体管 TXARRAY NPN GILBERT CELL 8W RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| HFA3101BZ | 制造商:Intersil Corporation 功能描述:TRANSISTOR ARRAY |
| HFA3101BZ | 制造商:Intersil Corporation 功能描述:IC TRANSISTOR ARRAY GILBERT 制造商:Intersil Corporation 功能描述:IC TRANSISTOR ARRAY, GILBERT |
| HFA3101BZ96 | 功能描述:射频双极小信号晶体管 TXARRAY NPN GILBERT CELL 8W MILEL RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
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