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参数资料
| 型号： | HFA320NJ40C |
| 厂商： | International Rectifier |
| 英文描述： | HEXFRED Ultrafast, Soft Recovery Diode |
| 中文描述： | HEXFRED二极超快，软恢复二极管 |
| 文件页数： | 1/5页 |
| 文件大小： | 329K |
| 代理商： | HFA320NJ40C |
Reduced RFI and EMI
Reduced Snubbing
Extensive Characterization of
Recovery Parameters
Features
Description
HEXFRED
power conditioning systems. An extensive characterization of the recovery
behavior for different values of current, temperature and di/dt simplifies the
calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are ideally
suited for power converters, motors drives and other applications where
switching losses are significant portion of the total losses.
TM
diodes are optimized to reduce losses and EMI/RFI in high frequency
Ultrafast, Soft Recovery Diode
HEXFRED
TM
HFA320NJ40C
BASE COMMON CATHODE
LUG
TERMINAL
ANODE 1
LUG
TERMINAL
ANODE 2
PD -2.449 rev. B 02/99
V
R
= 400V
V
F
(typ.)
= 1V
I
F(AV)
= 320A
Q
rr
(typ.) = 420nC
I
RRM
(typ.)
= 8.7A
t
rr
(typ.)
= 45ns
di
(rec)M
/dt (typ.)
= 280A/μs
TO-244AB
Thermal - Mechanical Characteristics
Parameter
R
thJC
Junction-to-Case, Single Leg Conducting
Junction-to-Case, Both Legs Conducting
R
thCS
Case-to-Sink, Flat, Greased Surface
Wt
Weight
Mounting Torque
Mounting Torque Center Hole
Terminal Torque
Vertical Pull
2 inch Lever Pull
Absolute Maximum Ratings (per Leg)
Parameter
V
R
Cathode-to-Anode Voltage
I
F
@ T
C
= 25°C
Continuous Forward Current
I
F
@ T
C
= 100°C
Continuous Forward Current
I
FSM
Single Pulse Forward Current
E
AS
Non-Repetitive Avalanche Energy
P
D
@ T
C
= 25°C
Maximum Power Dissipation
P
D
@ T
C
= 100°C
Maximum Power Dissipation
T
J
Operating Junction and
T
STG
Storage Temperature Range
lbfin
(Nm)
°C/W
K/W
Min.
30 (3.4)
12 (1.4)
30 (3.4)
Typ.
0.10
79 (2.8)
Max.
0.24
0.12
40 (4.6)
18 (2.1)
40 (4.6)
80
35
Units
g (oz)
Max.
400
321
160
1200
1.4
625
250
Units
V
mJ
-55 to +150
W
A
C
lbfin
Note:
Limited by junction temperature
L = 100μH, duty cycle limited by max T
J
125°C
Mounting surface must be smooth, flat, free or burrs or other
protrusions. Apply a thin even film or thermal grease to mounting
surface. Gradually tighten each mounting bolt in 5-10 lbfin steps
until desired or maximum torque limits are reached. Module
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HFA320NJ40CPBF | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:HEXFRED? Ultrafast Soft Recovery Diode, 320 A |
| HFA320NJ40D | 功能描述:DIODE HEXFRED 400V 321A TO-244AB RoHS:是 类别:半导体模块 >> 二极管，整流器 系列:HEXFRED® 标准包装:10 系列:- 电压 - 在 If 时为正向 (Vf)（最大）:1.45V @ 30A 电流 - 在 Vr 时反向漏电:15µA @ 400V 电流 - 平均整流 (Io)（每个二极管）:30A 电压 - (Vr)（最大）:400V 反向恢复时间(trr):65ns 二极管类型:标准 速度:快速恢复 = 200mA（Io） 二极管配置:2 个独立式 安装类型:底座安装 封装/外壳:ISOTOP 供应商设备封装:ISOTOP? 包装:管件 |
| HFA32PA120C | 功能描述:整流器 1200 Volt 2x16 Amp Common Cathode RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| HFA32PA120CPBF | 功能描述:DIODE HEXFRED 1200V 16A TO247AC RoHS:是 类别:分离式半导体产品 >> 二极管，整流器 - 阵列 系列:HEXFRED® 其它有关文件:STTH10LCD06C View All Specifications 标准包装:1,000 系列:- 电压 - 在 If 时为正向 (Vf)（最大）:2V @ 5A 电流 - 在 Vr 时反向漏电:1µA @ 600V 电流 - 平均整流 (Io)（每个二极管）:5A 电压 - (Vr)（最大）:600V 反向恢复时间(trr):50ns 二极管类型:标准 速度:快速恢复 = 200mA（Io） 二极管配置:1 对共阴极 安装类型:表面贴装 封装/外壳:TO-263-3，D²Pak（2 引线+接片），TO-263AB 供应商设备封装:D2PAK 包装:带卷 (TR) 产品目录页面:1553 (CN2011-ZH PDF) 其它名称:497-10107-2 |
| HFA32PA120CPBF_11 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:HEXFRED Ultrafast Soft Recovery Diode, 2 x 16 A |
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