- 您现在的位置：买卖IC网 > PDF目录299175 > HFB16PA120CPBF 8 A, SILICON, RECTIFIER DIODE, TO-247AC PDF资料下载
参数资料
| 型号： | HFB16PA120CPBF |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 8 A, SILICON, RECTIFIER DIODE, TO-247AC |
| 封装： | TO-247AC, 3 PIN |
| 文件页数： | 1/7页 |
| 文件大小： | 124K |
| 代理商： | HFB16PA120CPBF |
Parameter
Max
Units
VR
Cathode-to-Anode Voltage
1200
V
IF @ TC = 100°C
Continuous Forward Current
8
A
IFSM
Single Pulse Forward Current
130
IFRM
Maximum Repetitive Forward Current
32
PD @ TC = 25°C
Maximum Power Dissipation
73.5
W
PD @ TC = 100°C
Maximum Power Dissipation
29
TJ
Operating Junction and
- 55 to 150
°C
TSTG
Storage Temperature Range
Ultrafast, Soft Recovery Diode
HEXFREDTM
HFA16PA120C
1
Ultrafast Recovery
Ultrasoft Recovery
Very Low IRRM
Very Low Qrr
Specified at Operating Conditions
Benefits
Reduced RFI and EMI
Reduced Power Loss in Diode and Switching
Transistor
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
Features
Description
International Rectifier's HFA16PA120C is a state of the art ultra fast recovery diode.
Employing the latest in epitaxial construction and advanced processing techniques it
features a superb combination of characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and
8 amps continuous current, the HFA16PA120C is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the
HEXFRED product line features extremely low values of peak recovery current (IRRM)
and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and heatsink
sizes. The HEXFRED HFA16PA120C is ideally suited for applications in power supplies
and power conversion systems (such as inverters), motor drives, and many other similar
applications where high speed, high efficiency is needed.
*
VR = 1200V
VF (max.) = 3.3V
IF (AV) = 8.0A
I
RRM (typ.) = 4.5A
* per Leg
Bulletin PD -2.361 rev. B 05/01
Absolute Maximum Ratings (per Leg)
TO-247AC
www.irf.com
1
3
2
相关PDF资料 |
PDF描述 |
|---|---|
| HFB35HB20PBF | 35 A, SILICON, RECTIFIER DIODE, TO-254AA |
| HFC03-22NJ-RC | 1 ELEMENT, 22 uH, GENERAL PURPOSE INDUCTOR, SMD |
| HFC03-5N1J-RC | 1 ELEMENT, 7.5 uH, GENERAL PURPOSE INDUCTOR, SMD |
| HFM108W-W | 1 A, 1000 V, SILICON, SIGNAL DIODE |
| HGP.00.250.CTLP | PANEL MOUNT, FEMALE, RF CONNECTOR, SOLDER, RECEPTACLE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HFB16PA60C | 制造商:IRF 制造商全称:International Rectifier 功能描述:Ultrafast, Soft Recovery Diode |
| HFB16PA60CPBF | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Ultrafast, Soft Recovery Diode, 2 x 8 A |
| HFB16PB120 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Ultrafast Soft Recovery Diode, 16 A |
| HFB16PB120PBF | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Ultrafast Soft Recovery Diode, 16 A |
| HFB170070-000 | 功能描述:EMI/RFI 抑制器及铁氧体 97ohms 300MHz 7.01mm Inside Dia. RoHS:否 制造商:Fair-Rite 产品:Ferrite Cores 阻抗:365 Ohms 容差: 最大直流电流: 最大直流电阻: 工作温度范围:- 55 C to + 125 C 封装 / 箱体: 端接类型:SMD/SMT |
发布紧急采购，3分钟左右您将得到回复。