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参数资料
| 型号： | HGT1S20N36G3VLS |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs |
| 中文描述： | 37.7 A, 355 V, N-CHANNEL IGBT, TO-263AB |
| 封装： | TO-263AB, 3 PIN |
| 文件页数： | 5/7页 |
| 文件大小： | 256K |
| 代理商： | HGT1S20N36G3VLS |
2004 Fairchild Semiconductor Corporation
HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Rev. C1
Specifications HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS
FIGURE 13.
SELF CLAMPED INDUCTIVE SWITCH-
ING CURRENT vs TIME IN CLAMP
FIGURE 14. CAPACITANCE vs
COLLECTOR-EMITTER VOLTAGE
FIGURE 13. GATE CHARGE
FIGURE 14. NORMALIZED TRANSIENT THERMAL
IMPEDANCE, JUNCTION TO CASE
FIGURE 15.BREAKDOWN VOLTAGE vs GATE -
EMITTER RESISTANCE
Typical Performance Curves
(Continued)
0
100
200
300
350
400
50
30
10
I
C
,
40
20
0
+25
o
C
+150
o
C
60
t
CLP
, TIME IN CLAMP (μS)
50
150
250
C
0
5
10
15
20
25
200
400
600
800
1000
1200
1400
1600
FREQUENCY = 1MHz
C
IES
C
OES
C
RES
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
0
Q
G
, GATE CHARGE (nC)
12
10
8
6
4
2
0
6
5
1
0
4
3
2
0
10
20
30
40
V
G
,
V
C
,
V
CE
= 4V
V
CE
= 8V
V
CE
= 12V
I
G
REF = 1.022mA, R
L
= 1.2
, T
C
= +25
o
C
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
10
-2
10
-1
10
0
10
-5
10
-3
10
-1
10
1
t
1
, RECTANGULAR PULSE DURATION (s)
0.5
0.1
SINGLE PULSE
0.01
0.05
0.2
Z
θ
J
,
0.02
10
0
10
-4
10
-2
0
2
4
6
8
10
335
340
345
350
R
GE
, GATE-TO-EMITTER RESISTANCE (K
)
B
C
,
I
CER
= 10mA
T
C
= 25
o
C AND 175
o
C
B
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| HGT1S20N60A4S9A | 功能描述:IGBT 晶体管 600V SMPS SERIES NCH IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGT1S20N60B3S | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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