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参数资料
型号： HGTD10N50F1
厂商： HARRIS SEMICONDUCTOR
元件分类： 功率晶体管
英文描述： 10A, 400V and 500V N-Channel IGBTs
中文描述： 12 A, 500 V, N-CHANNEL IGBT, TO-251AA
文件页数： 1/4页
文件大小： 33K
代理商： HGTD10N50F1
3-1
HGTD10N40F1, HGTD10N40F1S,
HGTD10N50F1, HGTD10N50F1S
10A, 400V and 500V N-Channel IGBTs
Features
10A, 400V and 500V
V
CE(ON)
2.5V Max.
T
FALL
≤
1.4
μ
s
Low On-State Voltage
Fast Switching Speeds
High Input Impedance
Applications
Power Supplies
Motor Drives
Protective Circuits
Description
The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and
HGTD10N50F1S are n-channel enhancement-mode insu-
lated gate bipolar transistors (IGBTs) designed for high volt-
age, low on-dissipation applications such as switching
regulators and motor drivers. These types can be operated
directly from low power integrated circuits.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTD10N40F1
TO-251AA
G10N40
HGTD10N50F1
TO-251AA
G10N50
HGTD10N40F1S
TO-252AA
G10N40
HGTD10N50F1S
TO-252AA
G10N50
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e., HGTD10N40F19A.
Packages
HGTD10N40F1, HGTD10N50F1
JEDEC TO-251AA
HGTD10N40F1S, HGTD10N50F1S
JEDEC TO-252AA
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
EMITTER
GATE
C
E
G
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTD10N40F1
HGTD10N40F1S
400
400
±
20
12
10
75
0.6
-55 to +150
HGTD10N50F1
HGTD10N50F1S
500
500
±
20
12
10
75
0.6
-55 to +150
UNITS
V
V
V
A
A
W
W/
o
C
o
C
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
CES
Collector-Gate Voltage R
GE
= 1M
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
CGR
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GE
Collector Current Continuous at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
at T
C
= +90
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C90
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
March 1997
File Number
2425.4
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
相关PDF资料
PDF描述
HGTD10N50F1S 10A, 400V and 500V N-Channel IGBTs
HGTD10N40F1 10A, 400V and 500V N-Channel IGBTs
HGTD2N120BNS 12A, 1200V, NPT Series N-Channel IGBT(12A, 1200V,NPT系列N沟道绝缘栅双极型晶体管)
HGTG20N120CND 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG20N120E2 34A, 1200V N-Channel IGBT
相关代理商/技术参数
参数描述
HGTD10N50F1S 制造商:Rochester Electronics LLC 功能描述:- Bulk
HGTD1N120BNS 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:5.3A, 1200V, NPT Series N-Channel IGBT
HGTD1N120BNS9A 功能描述:IGBT 晶体管 5.3a 1200v N-Ch IGBT NPT Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
HGTD1N120CNS 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:6.2A, 1200V, NPT Series N-Channel IGBT
HGTD1N120CNS9A 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 6.2A I(C) | TO-252AA
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