- 您现在的位置：买卖IC网 > PDF目录385377 > HGTD10N50F1 (HARRIS SEMICONDUCTOR) 10A, 400V and 500V N-Channel IGBTs PDF资料下载
参数资料
| 型号： | HGTD10N50F1 |
| 厂商： | HARRIS SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10A, 400V and 500V N-Channel IGBTs |
| 中文描述： | 12 A, 500 V, N-CHANNEL IGBT, TO-251AA |
| 文件页数： | 4/4页 |
| 文件大小： | 33K |
| 代理商： | HGTD10N50F1 |
3-4
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
ASIA
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S
FIGURE 9. MAXIMUM OPERATING FREQUENCY vs COLLECTOR
CURRENT AND VOLTAGE (TYPICAL)
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS AT
CONSTANT GATE CURRENT
Test Circuit
FIGURE 11. INDUCTIVE SWITCHING TEST CIRCUIT
Typical Performance Curves
(Continued)
1000
100
10
1
f
O
,
1
10
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C, T
C
= +100
o
C, V
GE
= 10V
R
G
= 25
, PT = 75W, L = 50
μ
H
V
CE
= 200V
V
CE
= 400V
f
MAX1
= 0.05/t
D(OFF)I
f
MAX2
= (P
D
- P
C
)/W
OFF
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
NOTE:
V
C
,500
375
250
125
0
V
G
,
10
5
0
V
CC
= BV
CES
V
CC
= BV
CES
0.75 BV
CES
0.50 BV
CES
0.25 BV
CES
COLLECTOR-EMITTER VOLTAGE
0.75 BV
CES
0.50 BV
CES
0.25 BV
CES
GATE-
EMITTER
VOLTAGE
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
TIME (
μ
s)
R
L
= 100
I
G(REF)
= 0.33mA
V
GE
= 10V
20V
0V
R
GEN
= 50
1/R
G
= 1/R
GEN
+ 1/R
GE
R
GE
= 50
L = 50
μ
H
V
400V
+
R
L
-
相关PDF资料 |
PDF描述 |
|---|---|
| HGTD10N50F1S | 10A, 400V and 500V N-Channel IGBTs |
| HGTD10N40F1 | 10A, 400V and 500V N-Channel IGBTs |
| HGTD2N120BNS | 12A, 1200V, NPT Series N-Channel IGBT(12A, 1200V,NPT系列N沟道绝缘栅双极型晶体管) |
| HGTG20N120CND | 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTG20N120E2 | 34A, 1200V N-Channel IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTD10N50F1S | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTD1N120BNS | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:5.3A, 1200V, NPT Series N-Channel IGBT |
| HGTD1N120BNS9A | 功能描述:IGBT 晶体管 5.3a 1200v N-Ch IGBT NPT Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTD1N120CNS | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:6.2A, 1200V, NPT Series N-Channel IGBT |
| HGTD1N120CNS9A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 6.2A I(C) | TO-252AA |
发布紧急采购，3分钟左右您将得到回复。