参数资料
型号: HGTD10N40F1
厂商: HARRIS SEMICONDUCTOR
元件分类: 功率晶体管
英文描述: 10A, 400V and 500V N-Channel IGBTs
中文描述: 12 A, 400 V, N-CHANNEL IGBT, TO-251AA
文件页数: 3/4页
文件大小: 33K
代理商: HGTD10N40F1
3-3
HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S
FIGURE 3. SATURATION VOLTAGE vs COLLECTOR-EMITTER
CURRENT (TYPICAL)
FIGURE 4. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 5. CAPACITANCE vs COLLECTOR-TO-EMITTER
VOLTAGE (TYPICAL)
FIGURE 6. TURN-OFF DELAY vs COLLECTOR-TO-EMITTER
CURRENT (TYPICAL)
FIGURE 7. FALL TIME vs COLLECTOR-TO-EMITTER CURRENT
(TYPICAL)
FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOR-
EMITTER CURRENT (TYPICAL)
Typical Performance Curves
(Continued)
4
3
2
1
0
V
C
,
1
10
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C
V
GE
= 10V
V
GE
= 15V
V
GE
= 10V
V
GE
= 15V
18
16
14
12
10
8
6
4
2
0
I
C
,
+25
+50
+75
+100
+125
+150
T
C
, CASE TEMPERATURE (
o
C)
1000
800
600
400
200
0
C
0
5
10
15
20
25
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
f = 1MHz
CISS
COSS
CRSS
0.5
0.4
0.3
0.2
0.1
0.0
1
10
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
+150
o
C, V
CE
= 400V
L = 50
μ
H
V
GE
= 15V, R
G
= 50
V
GE
= 10V, R
G
= 50
V
GE
= 15V, R
G
= 25
V
GE
= 10V, R
G
= 25
t
D
,
μ
s
2
1
0
t
F
,
μ
s
1
10
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C, V
GE
= 10V
R
G
= 25
, L = 50
μ
H
V
CE
= 400V
10
1.0
0.1
W
O
,
1
10
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C, V
GE
= 10V
R
G
= 25
, L = 50
μ
H
V
CE
= 400V
V
CE
= 200V
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相关代理商/技术参数
参数描述
HGTD10N40F1S 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGTD10N50F1 制造商:Rochester Electronics LLC 功能描述:- Bulk
HGTD10N50F1S 制造商:Rochester Electronics LLC 功能描述:- Bulk
HGTD1N120BNS 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:5.3A, 1200V, NPT Series N-Channel IGBT
HGTD1N120BNS9A 功能描述:IGBT 晶体管 5.3a 1200v N-Ch IGBT NPT Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube