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参数资料
| 型号： | HGTG20N50C1D |
| 厂商： | HARRIS SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 36 MACROCELL 3.3 VOLT ISP CPLD |
| 中文描述： | 26 A, 500 V, N-CHANNEL IGBT, TO-247 |
| 文件页数： | 1/5页 |
| 文件大小： | 33K |
| 代理商： | HGTG20N50C1D |
3-71
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
HGTG20N50C1D
20A, 500V N-Channel IGBT
with Anti-Parallel Ultrafast Diode
Features
20A, 500V
Latch Free Operation
Typical Fall Time < 500ns
High Input Impedance
Low Conduction Loss
With Anti-Parallel Diode
t
RR
< 60ns
Description
The IGBT is a MOS gated high voltage switching device
combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between +25
o
C and +150
o
C. The diode used in
parallel with the IGBT is an ultrafast (t
RR
< 60ns) with soft
recovery characteristic.
IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are
essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contractors.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTG20N50C1D
TO-247
G20N50C1D
NOTE: When ordering, use the entire part number.
April 1995
Package
JEDEC STYLE TO-247
Terminal Diagram
COLLECTOR
(BOTTOM SIDE
METAL)
GATE
COLLECTOR
EMITTER
C
G
E
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTG20N50C1D
500
500
26
20
35
±
20
26
20
75
0.8
-55 to +150
260
UNITS
V
V
A
A
A
V
A
A
W
W/
o
C
o
C
o
C
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Collector-Gate Voltage R
GE
= 1M
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CGR
Collector Current Continuous at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C25
at T
C
= +90
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Diode Forward Current at T
C
= +25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
F25
at T
C
= +90
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
F90
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
NOTE: 1. T
J
= +150
o
C, Minimum R
GE
= 25
without latch
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
File Number
2796.3
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相关代理商/技术参数 |
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|---|---|
| HGTG20N60A4 | 功能描述:IGBT 晶体管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG20N60A4 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| HGTG20N60A4_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTG20N60A4D | 功能描述:IGBT 晶体管 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG20N60A4D | 制造商:Intersil Corporation 功能描述:IGBT TO-247 |
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