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参数资料
| 型号： | HGTG20N50C1D |
| 厂商： | HARRIS SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 36 MACROCELL 3.3 VOLT ISP CPLD |
| 中文描述： | 26 A, 500 V, N-CHANNEL IGBT, TO-247 |
| 文件页数： | 2/5页 |
| 文件大小： | 33K |
| 代理商： | HGTG20N50C1D |
3-72
Specifications HGTG20N50C1D
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Collector-Emitter Breakdown Voltage
BV
CES
I
C
= 1mA, V
GE
= 0V
500
-
V
Gate Threshold Voltage
V
GE(TH)
V
GE
= V
CE
, I
C
= 1mA
2
4.5
V
Zero Gate Voltage Collector Current
I
CES
V
CE
= 500V
-
250
μ
A
T
C
= +125
o
C, V
CE
= 500V
-
1000
μ
A
Gate-Emitter Leakage Current
I
GES
V
GE
=
±
20V, V
CE
= 0V
-
100
nA
Collector-Emitter On-Voltage
V
CE(SAT)
I
C
= 20A, V
GE
= 10V
-
2.5
V
I
C
= 35A, V
GE
= 20V
-
3.2
V
Gate-Emitter Plateau Voltage
V
GEP
I
C
= 10A, V
CE
= 10V
-
6 (Typ)
V
On-State Gate Charge
Q
G(ON)
I
C
= 10A, V
CE
= 10V
-
33 (Typ)
nC
Turn-On Delay Time
t
D(ON)I
I
C
= 20A, V
CE(CLP)
= 300V, L = 25
μ
H,
T
J
= +100
o
C, V
GE
= 10V, R
G
= 25
-
50
ns
Rise Time
t
RI
-
50
ns
Turn-Off Delay Time
t
D(OFF)I
-
400
ns
Fall Time
t
FI
400 (Typ)
500
ns
Turn-Off Energy Loss Per Cycle (Off Switching
Dissipation = W
OFF
x Frequency)
W
OFF
I
C
= 20A, V
CE(CLP)
= 300V, L = 25
μ
H,
T
J
= +100
o
C, V
GE
= 10V, R
G
= 25
1070 (Typ)
μ
J
Thermal Resistance Junction-to-Case (IGBT)
R
θ
JC
-
1.25
o
C/W
Thermal Resistance of Diode
R
θ
JC
-
1.5
ns
Diode Forward Voltage
V
EC
I
EC
= 20A
-
1.8
V
Diode Reverse Recovery Time
t
RR
I
EC
= 20A, di
EC
/dt = 100A/
μ
s
-
60
ns
Typical Performance Curves
FIGURE 1. POWER DISSIPATION vs TEMPERATURE
DERATING CURVE
FIGURE 2. TYPICAL NORMALIZED GATE-THRESHOLD
VOLTAGE vs JUNCTION TEMPERATURE
100
80
60
40
20
R
0
+25
+50
T
C
, CASE TEMPERATURE (
o
C)
+75
+100
+125
+150
+150
1.3
1.2
1.1
1.0
0.9
0.8
0.7
N
-50
0
+50
+100
+150
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GE
= V
CE
, I
C
= 1mA
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相关代理商/技术参数 |
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|---|---|
| HGTG20N60A4 | 功能描述:IGBT 晶体管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG20N60A4 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| HGTG20N60A4_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTG20N60A4D | 功能描述:IGBT 晶体管 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG20N60A4D | 制造商:Intersil Corporation 功能描述:IGBT TO-247 |
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