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参数资料
| 型号： | HGTG20N50C1D |
| 厂商： | HARRIS SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 36 MACROCELL 3.3 VOLT ISP CPLD |
| 中文描述： | 26 A, 500 V, N-CHANNEL IGBT, TO-247 |
| 文件页数： | 3/5页 |
| 文件大小： | 33K |
| 代理商： | HGTG20N50C1D |
3-73
HGTG20N50C1D
FIGURE 3. TYPICAL TRANSFER CHARACTERISTICS
FIGURE 4. TYPICAL SATURATION CHARACTERISTICS
FIGURE 5. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE
vs COLLECTOR CURRENT
FIGURE 6. CAPACITANCE vs COLLECTOR-TO-EMITTER
VOLTAGE
FIGURE 7. TYPICAL V
CE(ON)
vs TEMPERATURE
FIGURE 8. TYPICAL TURN-OFF DELAY TIME
Typical Performance Curves
(Continued)
35
30
25
20
15
10
5
I
C
,
0
2.5
5.0
7.5
10
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
V
CE
= 10V, PULSE TEST
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
-40
o
C
+25
o
C
+125
o
C
35
30
25
20
15
10
5
0
1
2
3
4
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
5
I
C
,
T
C
= +25
o
C
V
GE
= 20V
V
GE
= 10V
V
GE
= 8V
V
GE
= 7V
V
GE
= 6V
V
GE
= 5V
V
GE
= 4V
35
30
25
20
15
10
5
I
C
,
0
1
2
3
4
V
CE
, COLLECTOR-TO-EMITTER ON VOLTAGE (V)
V
CE
= 10V, PULSE TEST
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
2700
2250
1800
1350
900
450
C
0
10
20
30
40
50
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
f = 0.1MHz
CISS
COSS
CRSS
3.00
2.75
2.50
2.25
2.00
1.75
1.50
V
C
,
+25
+50
T
J
, JUNCTION TEMPERATURE (
o
C)
+75
+100
+125
+150
I
C
= 10A, V
GE
= 15V
I
C
= 10A, V
GE
= 10V
I
C
= 20A, V
GE
= 15V
I
C
= 20A, V
GE
= 10V
400
300
200
100
0
t
D
,
+25
+50
+75
+100
+125
+150
T
J
, JUNCTION TEMPERATURE (
o
C)
I
C
= 20A, V
GE
= 10V, V
CE(CLP)
= 300V
L = 25
μ
H, R
G
= 25
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相关代理商/技术参数 |
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|---|---|
| HGTG20N60A4 | 功能描述:IGBT 晶体管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG20N60A4 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| HGTG20N60A4_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTG20N60A4D | 功能描述:IGBT 晶体管 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG20N60A4D | 制造商:Intersil Corporation 功能描述:IGBT TO-247 |
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