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参数资料
| 型号： | HGTG20N60A4 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/9页 |
| 文件大小： | 0K |
| 描述： | IGBT N-CH SMPS 600V 70A TO247 |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 产品目录绘图： | IGBT TO-247 Package |
| 标准包装： | 150 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.7V @ 15V，20A |
| 电流 - 集电极 (Ic)（最大）： | 70A |
| 功率 - 最大： | 290W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 产品目录页面： | 1610 (CN2011-ZH PDF) |
| 其它名称： | HGTG20N60A4_NL HGTG20N60A4_NL-ND |
HGTG20N60A4
Typical Performance Curves
Unless Otherwise Specified (Continued)
100
DUTY CYCLE < 0.5%, V GE = 12V
PULSE DURATION = 250 ? s
100
DUTY CYCLE < 0.5%, V GE = 15V
PULSE DURATION = 250 ? s
80
60
40
T J = 125 o C
80
60
40
T J = 125 o C
20
T J = 150 o C
T J = 25 o C
20
T J = 150 o C
T J = 25 o C
0
0
0.4
0.8 1.2
1.6 2.0
2.4 2.8
3.2
0
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
1400
1200
1000
800
R G = 3 ? , L = 500 ? H, V CE = 390V
T J = 125 o C, V GE = 12V, V GE = 15V
800
700
600
500
R G = 3 ? , L = 500 ? H, V CE = 390V
T J = 125 o C, V GE = 12V OR 15V
400
600
400
300
200
200
T J = 25 o C, V GE = 12V, V GE = 15V
100
T J = 25 o C, V GE = 12V OR 15V
0
5
10
15
20 25 30 35
40
0
5
10
15
20
25
30
35
40
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
22
20
18
R G = 3 ? , L = 500 ? H, V CE = 390V
T J = 25 o C, T J = 125 o C, V GE = 12V
36
32
28
R G = 3 ? , L = 500 ? H, V CE = 390V
T J = 25 o C, T J = 125 o C, V GE = 12V
24
16
20
14
16
12
T J = 25 o C, T J = 125 o C, V GE = 15V
12
10
8
T J = 25 o C OR T J = 125 o C, V GE = 15V
8
5
10
15
20
25
30
35
40
4
5
10
15
20
25
30
35
40
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
?2005 Fairchild Semiconductor Corporation
HGTG20N60A4 Rev. C1
4
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTG20N60A4 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| HGTG20N60A4_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTG20N60A4D | 功能描述:IGBT 晶体管 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG20N60A4D | 制造商:Intersil Corporation 功能描述:IGBT TO-247 |
| HGTG20N60A4D_09 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
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