参数资料
型号: HGTG20N60A4
厂商: Fairchild Semiconductor
文件页数: 5/9页
文件大小: 0K
描述: IGBT N-CH SMPS 600V 70A TO247
产品培训模块: High Voltage Switches for Power Processing
SMPS Power Switch
产品变化通告: Lead Frame Change 20/Dec/2007
产品目录绘图: IGBT TO-247 Package
标准包装: 150
电压 - 集电极发射极击穿(最大): 600V
Vge, Ic时的最大Vce(开): 2.7V @ 15V,20A
电流 - 集电极 (Ic)(最大): 70A
功率 - 最大: 290W
输入类型: 标准
安装类型: 通孔
封装/外壳: TO-247-3
供应商设备封装: TO-247
包装: 管件
产品目录页面: 1610 (CN2011-ZH PDF)
其它名称: HGTG20N60A4_NL
HGTG20N60A4_NL-ND
HGTG20N60A4
Typical Performance Curves
Unless Otherwise Specified (Continued)
120
110
100
90
80
R G = 3 ? , L = 500 ? H, V CE = 390V
V GE = 12V, V GE = 15V, T J = 125 o C
V GE = 12V, V GE = 15V, T J = 25 o C
80
72
64
56
48
40
32
R G = 3 ? , L = 500 ? H, V CE = 390V
T J = 125 o C, V GE = 12V OR 15V
T J = 25 o C, V GE = 12V OR 15V
70
24
60
5
10
15
20
25
30
35
40
16
5
10
15
20
25
30
35
40
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
240
200
DUTY CYCLE < 0.5%, V CE = 10V
PULSE DURATION = 250 ? s
16
14
I G(REF) = 1mA, R L = 15 ? , T J = 25 o C
160
12
10
V CE = 600V
V CE = 400V
120
80
40
T J = 25 o C
T J = 125 o C
T J = -55 o C
8
6
4
V CE = 200V
2
0
6
7
8
9
10
11
12
0
0
20
40
60
80
100
120
140
160
V GE , GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
Q G , GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
1.8
1.6
R G = 3 ? , L = 500 ? H, V CE = 390V, V GE = 15V
E TOTAL = E ON2 + E OFF
T J = 125 o C, L = 500 ? H, V CE = 390V, V GE = 15V
E TOTAL = E ON2 + E OFF
10
1.4
1.2
1.0
I CE = 30A
I CE = 30A
0.8
0.6
0.4
I CE = 20A
I CE = 10A
1
I CE = 20A
I CE = 10A
0.2
0
25
50
75 100 125
T C , CASE TEMPERATURE ( o C)
150
0.1
3
10
100
R G , GATE RESISTANCE ( ? )
1000
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
?2005 Fairchild Semiconductor Corporation
HGTG20N60A4 Rev. C1
5
www.fairchildsemi.com
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相关代理商/技术参数
参数描述
HGTG20N60A4 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247
HGTG20N60A4_NL 制造商:Fairchild Semiconductor Corporation 功能描述:
HGTG20N60A4D 功能描述:IGBT 晶体管 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
HGTG20N60A4D 制造商:Intersil Corporation 功能描述:IGBT TO-247
HGTG20N60A4D_09 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode