- 您现在的位置：买卖IC网 > Datasheet目录438 > HGTG30N60B3D (Fairchild Semiconductor)IGBT N-CH UFS 600V 30A TO-247 Datasheet资料下载
参数资料
| 型号： | HGTG30N60B3D |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | IGBT N-CH UFS 600V 30A TO-247 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 产品目录绘图： | IGBT TO-247 Package |
| 标准包装： | 150 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 1.9V @ 15V，30A |
| 电流 - 集电极 (Ic)（最大）： | 60A |
| 功率 - 最大： | 208W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 产品目录页面： | 1610 (CN2011-ZH PDF) |
HGTG30N60B3D
Data Sheet
60A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
April 2004
Packaging
JEDEC STYLE TO-247
The HGTG30N60B3D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
E
C
G
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25 o C and 150 o C. The IGBT used is the
development type TA49170. The diode used in anti-parallel
with the IGBT is the development type TA49053.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49172.
Ordering Information
Symbol
G
C
PART NUMBER
HGTG30N60B3D
PACKAGE
TO-247
BRAND
G30N60B3D
E
NOTE: When ordering, use the entire part number.
Features
? 60A, 600V, T C = 25 o C
? 600V Switching SOA Capability
? Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at T J = 150 o C
? Short Circuit Rating
? Low Conduction Loss
? Hyperfast Anti-Parallel Diode
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
?2004 Fairchild Semiconductor Corporation
HGTG30N60B3D Rev. B2
相关PDF资料 |
PDF描述 |
|---|---|
| HGTG30N60B3 | IGBT UFS N-CHAN 600V 60A TO-247 |
| HGTG30N60C3D | IGBT N-CH UFS 600V 30A TO-247 |
| HGTG40N60A4 | IGBT N-CH SMPS 600V 75A TO247 |
| HGTG40N60B3 | IGBT N-CH UFS 600V 70A TO-247 |
| HGTP12N60C3D | IGBT SMPS N-CH 600V 24A TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTG30N60B3D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBTN CH600V30ATO-247 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT,N CH,600V,30A,TO-247 |
| HGTG30N60B3D | 制造商:Fairchild Semiconductor Corporation 功能描述:SEMICONDUCTOR |
| HGTG30N60B3D_04 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTG30N60B3D_Q | 功能描述:IGBT 晶体管 600V IGBT UFS N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG30N60C3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
发布紧急采购，3分钟左右您将得到回复。