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参数资料
| 型号： | HGTP10N120BN |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | IGBT NPT N-CH 1200V 35A TO-220AB |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 400 |
| IGBT 类型： | NPT |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.7V @ 15V，10A |
| 电流 - 集电极 (Ic)（最大）： | 35A |
| 功率 - 最大： | 298W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | HGTP10N120BN-ND HGTP10N120BNFS |
HGTG10N120BN, HGTP10N120BN,
HGT1S10N120BNS
Data Sheet
35A, 1200V, NPT Series N-Channel IGBT
The HGTG10N120BN, HGTP10N120BN and
HGT1S10N120BNS are N on- P unch T hrough (NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on-
state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49290.
Ordering Information
August 2002
Features
? 35A, 1200V, T C = 25 o C
? 1200V Switching SOA Capability
? Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T J = 150 o C
? Short Circuit Rating
? Low Conduction Loss
? Avalanche Rated
? Thermal Impedance SPICE Model
Temperature Compensating SABER? Model
www.fairchildsemi.com
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging
PART NUMBER
HGTG10N120BN
PACKAGE
TO-247
BRAND
G10N120BN
JEDEC STYLE TO-247
E
HGTP10N120BN
HGT1S10N120BNS
TO-220AB
TO-263AB
10N120BN
10N120BN
COLLECTOR
(FLANGE)
C
G
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the TO-263AB variant in tape and reel, e.g.
HGT1S10N120BNST.
Symbol
C
JEDEC TO-220AB (ALTERNATE VERSION)
G
COLLECTOR
(FLANGE)
C
E
G
E
JEDEC TO-263AB
COLLECTOR
G
(FLANGE)
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
?2002 Fairchild Semiconductor Corporation
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
相关PDF资料 |
PDF描述 |
|---|---|
| AS-13.225625MAHK-B | CRYSTAL 13.225625 MHZ 20PF |
| AS-11.2896MAHK-B | CRYSTAL 11.2896 MHZ 20PF |
| MC1220DIN | EMI FILTER 20A DIN RAIL |
| 5120.0503.0 | 5120 APPLIANCE INLET FLTR 4A M80 |
| AS-10.000MAHI-B | CRYSTAL 10.000 MHZ 16PF |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTP10N120BNFS | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTP10N40C1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP10N40C1D | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP10N40E1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP10N40E1D | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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