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参数资料
| 型号： | HGTP10N120BN |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 5/8页 |
| 文件大小： | 0K |
| 描述： | IGBT NPT N-CH 1200V 35A TO-220AB |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 400 |
| IGBT 类型： | NPT |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.7V @ 15V，10A |
| 电流 - 集电极 (Ic)（最大）： | 35A |
| 功率 - 最大： | 298W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | HGTP10N120BN-ND HGTP10N120BNFS |
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
Typical Performance Curves
Unless Otherwise Specified (Continued)
40
35
R G = 10 ? , L = 2mH, V CE = 960V
T J = 25 o C, T J = 150 o C, V GE = 12V
50
40
R G = 10 ? , L = 2mH, V CE = 960V
T J = 25 o C, T J = 150 o C, V GE = 12V
30
25
20
T J = 25 o C, T J = 150 o C, V GE = 15V
30
20
10
T J = 25 o C OR T J = 150 o C, V GE = 15V
15
0
5
10
15
20
0
0
5
10
15
20
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
400
R G = 10 ? , L = 2mH, V CE = 960V
300
R G = 10 ? , L = 2mH, V CE = 960V
350
250
300
V GE = 12V, V GE = 15V, T J = 150 o C
200
250
200
150
T J = 150 o C, V GE = 12V OR 15V
150
V GE = 12V, V GE = 15V, T J = 25 o C
100
T J = 25 o C, V GE = 12V OR 15V
100
0
5
10
15
20
50
0
5
10
15
20
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
100
DUTY CYCLE <0.5%, V CE = 20V
PULSE DURATION = 250 μ s
20
I G (REF) = 1mA, R L = 60 ? , T C = 25 o C
80
60
15
10
V CE = 1200V
V CE = 800V
40
20
T C = 25 o C
T C = 150 o C
T C = -55 o C
5
V CE = 400V
0
7
8
9
10
11
12
13
14
15
0
0
20
40
60
80
100
120
V GE , GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
?2002 Fairchild Semiconductor Corporation
Q G , GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
相关PDF资料 |
PDF描述 |
|---|---|
| AS-13.225625MAHK-B | CRYSTAL 13.225625 MHZ 20PF |
| AS-11.2896MAHK-B | CRYSTAL 11.2896 MHZ 20PF |
| MC1220DIN | EMI FILTER 20A DIN RAIL |
| 5120.0503.0 | 5120 APPLIANCE INLET FLTR 4A M80 |
| AS-10.000MAHI-B | CRYSTAL 10.000 MHZ 16PF |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTP10N120BNFS | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTP10N40C1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP10N40C1D | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP10N40E1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP10N40E1D | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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