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参数资料
| 型号： | HGTP14N36G3VL |
| 厂商： | HARRIS SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 14A, 360V N-Channel,Logic Level, Voltage Clamping IGBTs(14A, 360V N沟道,逻辑电平,电压箝位绝缘栅双极型晶体管.) |
| 中文描述： | 18 A, N-CHANNEL IGBT, TO-220AB |
| 文件页数： | 4/6页 |
| 文件大小： | 110K |
| 代理商： | HGTP14N36G3VL |
3-58
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
FIGURE 7. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF CASE TEMPERATURE
FIGURE 8. NORMALIZED THRESHOLD VOLTAGE AS A
FUNCTION OF JUNCTION TEMPERATURE
FIGURE 9. LEAKAGE CURRENT AS A FUNCTION OF
JUNCTION TEMPERATURE
FIGURE 10. TURN-OFF TIME AS A FUNCTION OF
JUNCTION TEMPERATURE
FIGURE 11. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT AS A FUNCTION OF INDUCTANCE
FIGURE 12. SELF CLAMPED INDUCTIVE SWITCHING ENERGY
AS A FUNCTION OF INDUCTANCE
Typical Performance Curves
(Continued)
+25
+50
+75
+125
+150
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
0
+100
+175
2
4
6
8
10
12
16
18
V
GE
= 5V
14
20
T
J
, JUNCTION TEMPERATURE (
o
C)
-25
+25
+75
+125
+175
V
G
N
0.6
0.7
0.8
0.9
1.0
1.1
1.2
I
CE
= 1ma
T
J
, JUNCTION TEMPERATURE (
o
C)
L
A
1E-1
1E0
1E1
1E2
1E3
1E4
+20
+60
+100
+140
+180
V
ECS
= 20V
V
CES
= 250V
T
J
, JUNCTION TEMPERATURE (
o
C)
t
(
μ
s
6.0
5.0
4.5
4.0
3.5
3.0
+25
+50
+ 75
+100
+150
+175
+125
5.5
6.5
V
CE
= 300V, V
GE
= 5V
R
GE
= 25
, L = 550
μ
H
R
L
= 37
, I
CE
= 7A
7.0
L, INDUCTANCE (mH)
0
2
4
6
8
10
20
10
I
C
,
15
5
25
+25
o
C
+175
o
C
V
GE
= 5V
0
2
4
6
8
10
L, INDUCTANCE (mH)
E
A
,
150
200
250
300
350
400
450
500
550
600
650
+25
o
C
+175
o
C
V
GE
= 5V
相关PDF资料 |
PDF描述 |
|---|---|
| HGT1S14N37G3VLS | 14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs(14A, 370V N沟道,逻辑电平,电压箝位IGBTs) |
| HGTP14N37G3VL | 14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs(14A, 370V N沟道,逻辑电平,电压箝位IGBTs) |
| HGT1S20N36G3VL | 20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs |
| HGT1S20N36G3VLS | 20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs |
| HGTP20N36G3VL | 20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTP14N37G3VL | 功能描述:IGBT 晶体管 14A 370V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTP14N40F3VL | 功能描述:IGBT 晶体管 400V/14A/TF<1.2US RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTP14N41G3VL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 445V V(BR)CES | TO-220AB |
| HGTP14N41G3VLS | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs |
| HGTP14N44G3VL | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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