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参数资料
| 型号： | HGTP14N36G3VL |
| 厂商： | HARRIS SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 14A, 360V N-Channel,Logic Level, Voltage Clamping IGBTs(14A, 360V N沟道,逻辑电平,电压箝位绝缘栅双极型晶体管.) |
| 中文描述： | 18 A, N-CHANNEL IGBT, TO-220AB |
| 文件页数： | 5/6页 |
| 文件大小： | 110K |
| 代理商： | HGTP14N36G3VL |
3-59
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. NORMALIZED TRANSIENT THERMAL
IMPEDANCE, JUNCTION TO CASE
FIGURE 16. BREAKDOWN VOLTAGE AS A FUNCTION OF
GATE-EMITTER RESISTANCE
Test Circuits
FIGURE 17. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT TEST CIRCUIT
FIGURE 18. CLAMPED INDUCTIVE SWITCHING TIME
TEST CIRCUIT
Typical Performance Curves
(Continued)
C
0
5
10
15
20
25
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
400
600
800
1400
1600
1800
2000
C
RES
C
OES
C
IES
1200
1000
FREQUENCY = 1MHz
200
0
Q
G
, GATE CHARGE (nC)
12
10
8
6
4
2
0
6
5
1
0
4
3
2
0
5
15
20
25
30
V
C
,
V
G
,
REF I
G
= 1mA, R
L
= 1.7
, T
C
= +25
o
C
10
V
CE
= 12V
V
CE
= 4V
V
CE
= 8V
t
1
, RECTANGULAR PULSE DURATION (s)
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
0.02
0.05
0.5
Z
θ
J
,
0.2
0.1
0.01
t
1
t
2
PD
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
SINGLE PULSE
R
GE
, GATE-TO- EMITTER RESISTANCE (
)
0
2000
4000
6000
8000
10000
325
330
335
340
345
350
355
B
C
,
25
o
C
175
o
C
B
R
G
G
C
E
V
DD
2.3mH
DUT
R
GEN
= 25
5V
R
GEN
= 50
+
-
V
CC
300V
DUT
10V
C
G
E
R
GE
= 50
1/R
G
= 1/R
GEN
+ 1/R
GE
L = 550
μ
H
R
L
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTP14N37G3VL | 功能描述:IGBT 晶体管 14A 370V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTP14N40F3VL | 功能描述:IGBT 晶体管 400V/14A/TF<1.2US RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTP14N41G3VL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 445V V(BR)CES | TO-220AB |
| HGTP14N41G3VLS | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs |
| HGTP14N44G3VL | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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