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参数资料
| 型号： | HGTP20N36G3VL |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs |
| 中文描述： | 37.7 A, 355 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 4/7页 |
| 文件大小： | 256K |
| 代理商： | HGTP20N36G3VL |
2004 Fairchild Semiconductor Corporation
HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Rev. C1
Specifications HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS
FIGURE 7. COLLECTOR-EMITTER CURRENT vs
CASE TEMPERATURE
FIGURE 8. NORMALIZED THRESHOLD VOLTAGE
vs JUNCTION TEMPERATURE
FIGURE 9. LEAKAGE CURRENT vs JUNCTION
TEMPERATURE
FIGURE 10. TURN-OFF TIME vs
JUNCTION TEMPERATURE
FIGURE 11. SELF CLAMPED INDUCTIVE
SWITCHING CURRENT vs INDUCTANCE
FIGURE 12. SELF CLAMPED INDUCTIVE
SWITCHING ENERGY vs INDUCTANCE
Typical Performance Curves
(Continued)
25
50
75
100
125
150
40
30
20
10
0
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
175
V
GE
= 5.0V
-25
75
125
175
1.2
1.0
T
J
, JUNCTION TEMPERATURE (
o
C)
25
V
T
,
1.1
0.9
0.7
0.6
0.8
0.5
I
CE
= 1mA
T
J
, JUNCTION TEMPERATURE (
o
C)
L
25
50
75
100
125
150
175
10
-1
10
0
10
1
10
2
10
3
10
4
10
5
V
ECS
= 20V
V
CES
= 250V
T
J
, JUNCTION TEMPERATURE (
o
C)
175
150
125
100
75
50
25
10
12
14
16
18
t
(
,
V
CL
= 300V, R
GE
= 25
, V
GE
= 5V, L= 550μH
I
CE
= 6A, R
L
= 50
I
CE
=15A, R
L
= 20
I
CE
=10A, R
L
= 30
INDUCTANCE (mH)
0
2
4
6
8
10
50
30
10
0
I
C
,
40
20
V
GE
= 5V, R
G
= 1K, V
DD
= 14V
+25
o
C
+150
o
C
60
0
1
2
3
4
5
100
200
300
400
INDUCTANCE (mH)
E
A
,
+25
o
C
+150
o
C
0
500
500
V
GE
= 5V, R
G
= 1K, V
DD
= 14V
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