参数资料
型号: HI5780JCQ
厂商: HARRIS SEMICONDUCTOR
元件分类: DAC
英文描述: 10-Bit, 80 MSPS, High Speed, Low Power D/A Converter
中文描述: PARALLEL, WORD INPUT LOADING, 0.006 us SETTLING TIME, 10-BIT DAC, PQFP32
文件页数: 3/8页
文件大小: 75K
代理商: HI5780JCQ
10-1718
HI5780
Absolute Maximum Ratings
Thermal Information
Supply Voltage V
DD
to DGND . . . . . . . . . . . . . . . . . . . . . . . . .+7.0V
Digital Input Voltages (D9-D0, CLK, BLANK, PD) . . . . V
DD
to -0.5V
Internal Reference Output Current. . . . . . . . . . . . . . . . . . . .
±
2.5mA
Reference Input Voltage Range (V
REF
) . . . . . . . . . . . . V
DD
to -0.5 V
Analog Output Current (I
OUT
). . . . . . . . . . . . . . . . . . . . . . . . . .15mA
Operating Conditions
Temperature Range, HI5780BIx. . . . . . . . . . . . . . . . . -20
o
C to 75
o
C
Thermal Resistance (Typical, Note 1)
MQFP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Junction Temperature (Plastic Package)
Maximum Storage Temperature Range . . . . . . . . . .-65
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . . 300
o
C
(MQFP - Lead Tips Only)
θ
JA
(
o
C/W)
122
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
AV
DD
, DV
DD
= 5.00V, V
REF
= 2.0V, f
CLK
= 80 MSPS, R
LOAD
= 200
,
R
REF
= 3.3k
,
T
A
= 25
o
C
PARAMETER
TEST CONDITIONS
HI5780JCQ
UNITS
MIN
TYP
MAX
SYSTEM PERFORMANCE
Resolution
10
-
-
Bits
Integral Linearity Error, INL
(Notes 4, 5) (“Best Fit” Straight Line)
-2.0
1.25
2.0
LSB
Differential Linearity Error, DNL
(Notes 4, 5)
-0.5
0.25
0.5
LSB
Offset Error, I
OS
(Notes 4, 5)
-
-
5
μ
A
Full Scale Output Current, I
FS
(Note 4)
9.0
9.6
10
mA
Full Scale Drift Coefficient, I
DRIFT
(Note 2)
-
0.26
-
mV/
o
C
Output Voltage Compliance Range
(Note 3), 10-Bit Accuracy
1.8
1.92
2.0
V
DYNAMIC CHARACTERISTICS
Throughput Rate
(Note 3)
80.0
-
-
MSPS
Output Voltage Full Scale Step
Settling Time, t
SETT FS
To
±
0.5 LSB Error Band R
L
= 75
, 10-Bit Accuracy
(Note 3)
-
6.0
-
ns
Singlet Glitch Area, GE (Peak)
R
LOAD
= 75
,
V
OUT
= 1.0V
P-P
(Note 3)
-
40
-
pV-s
Differential Gain, DG
(Note 4)
-
2.5
-
%
Differential Phase, DP
(Note 4)
-
1.3
-
Degrees
Spurious Free Dynamic Range,
SFDR to Nyquist
f
CLK
= 40 MSPS, f
OUT
= 2.02MHz, 20MHz Span
(Note 3)
-
48.5
-
dBc
f
CLK
= 80 MSPS, f
OUT
= 2.02MHz, 40MHz Span
(Note 3)
-
47.5
-
dBc
f
CLK
= 40 MSPS, f
OUT
= 10MHz, 20MHz Span (Note 3)
-
40.75
-
dBc
f
CLK
= 80 MSPS, f
OUT
= 20MHz, 40MHz Span (Note 3)
-
38.5
-
dBc
Spurious Free Dynamic Range, SFDR Within
a Window
f
CLK
= 40 MSPS, f
OUT
= 2.02MHz, 2MHz Span (Note 3)
-
75.0
-
dBc
f
CLK
= 80 MSPS, f
OUT
= 2.02MHz, 2MHz Span (Note 3)
-
73.5
-
dBc
f
CLK
= 40 MSPS, f
OUT
= 10MHz, 2MHz Span (Note 3)
-
56.5
-
dBc
f
CLK
= 80 MSPS, f
OUT
= 20MHz, 2MHz Span (Note 3)
-
49.0
-
dBc
REFERENCE
Internal Reference Voltage, REF
OUT
(Notes 4, 5)
1.0
1.25
1.3
V
Internal Reference Voltage Drift
(Note 3)
-
0.34
-
mV/
o
C
Reference Input Voltage Range, V
REF
(Note 3)
0.5
-
2.0
V
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