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参数资料
| 型号： | HIP1020CK-T |
| 厂商： | HARRIS SEMICONDUCTOR |
| 元件分类： | 稳压器 |
| 英文描述： | nullSingle, Double or Triple-Output Hot Plug Controller |
| 中文描述： | SWITCHED CAPACITOR CONVERTER, PDSO5 |
| 文件页数： | 6/6页 |
| 文件大小： | 51K |
| 代理商： | HIP1020CK-T |
2-6
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
Sales Office Headquarters
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Intersil Corporation
P. O. Box 883, Mail Stop 53-204
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TEL: (321) 724-7000
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TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
Special Applications
The HIP1020 is well suited to work with N-Channel
MOSFETs controlling voltages other than 12V, 5V, or 3.3V
provided three basic constraints are observed. The first
constraint is that the bias voltage for the HIP1020 is either
12V or 5V. Chip operation at voltages significantly below 5V
is not possible, while a bias voltage very much above 12V
can unnecessarily stress the part. Operation between 5V
and 12V can “confuse” the chip as it tries to determine
whether to operate as a voltage doubler or voltage tripler.
The final two constraints have to do with proper operation of
the power MOSFETs. These constraints assume that a rail
voltage, V
RAIL
, is to be switched using an N-Channel power
MOSFET having a gate-to-source breakdown voltage of
V
BR
and a threshold voltage of V
TH
.
V
TH
V
GATE
can be either V
HGATE
or V
LGATE
depending on
which pin is connected to the power MOSFET and will be
selected based on which gate voltage is most appropriate for
the application. The requirement in Equation 2 is necessary
to assure that the power MOSFET is fully enhanced. V
TH
should be the maximum data-sheet value needed to assure
adequately low r
DSON
. The requirement in Equation 3
assures that the power MOSFET is protected from
breakdown of the gate oxide.
V
GATE
V
RAIL
–
<
(EQ.2)
V
BR
V
GATE
V
RAIL
–
>
(EQ.3)
HIP1020
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HIP1020CKZ-T | 功能描述:热插拔功率分布 DEVICE BAY PWR CNTRLR RoHS:否 制造商:Texas Instruments 产品:Controllers & Switches 电流限制: 电源电压-最大:7 V 电源电压-最小:- 0.3 V 工作温度范围: 功率耗散: 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Tube |
| HIP1030 | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:1A High Side Driver with Overload Protection |
| HIP1030_00 | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:1A High Side Driver with Overload Protection |
| HIP1030AS | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:1A High Side Driver with Overload Protection |
| HIP1031 | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Half Amp High Side Driver with Overload Protection |
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