参数资料
型号: HIP2100IR4ZT
厂商: Intersil
文件页数: 4/12页
文件大小: 0K
描述: IC DRIVER HALF BRIDGE 100V 12DFN
标准包装: 6,000
配置: 半桥
输入类型: PWM
延迟时间: 20ns
电流 - 峰: 2A
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 114V
电源电压: 9 V ~ 14 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 12-VFDFN 裸露焊盘
供应商设备封装: 12-DFN-EP(4x4)
包装: 带卷 (TR)
HIP2100
Absolute Maximum Ratings
Supply Voltage, V DD, V HB -V HS (Notes 3, 4) . . . . . . . . -0.3V to 18V
LI and HI Voltages (Note 4) . . . . . . . . . . . . . . . . -0.3V to V DD +0.3V
Voltage on LO (Note 4) . . . . . . . . . . . . . . . . . . . -0.3V to V DD +0.3V
Voltage on HO (Note 4) . . . . . . . . . . . . . . . V HS -0.3V to V HB +0.3V
Voltage on HS (Continuous) (Note 4) . . . . . . . . . . . . . . -1V to 110V
Voltage on HB (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +118V
Average Current in V DD to HB diode . . . . . . . . . . . . . . . . . . . 100mA
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 (1kV)
Maximum Recommended Operating Conditions
Supply Voltage, V DD . . . . . . . . . . . . . . . . . . . . . . . . +9V to 14.0VDC
Voltage on HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1V to 100V
Thermal Information
Thermal Resistance (Typical) θ JA (°C/W) θ JC (°C/W)
SOIC (Note 5) . . . . . . . . . . . . . . . . . . . 95 50
EPSOIC (Note 6) . . . . . . . . . . . . . . . . . 40 3.0
QFN (Note 6) . . . . . . . . . . . . . . . . . . . . 37 6.5
DFN (Note 6) . . . . . . . . . . . . . . . . . . . . 40 3.0
Max Power Dissipation at +25°C in Free Air (SOIC, Note 5) . . . . 1.3W
Max Power Dissipation at +25°C in Free Air (EPSOIC, Note 6) . . 3.1W
Max Power Dissipation at +25°C in Free Air (QFN, Note 6) . . . . . 3.3W
Storage Temperature Range . . . . . . . . . . . . . . . . . .-65°C to +150°C
Junction Temperature Range. . . . . . . . . . . . . . . . . .-55°C to +150°C
Pb-Free Reflow Profile. . . . . . . . . . . . . . . . . . . . . . . . .see link below
Voltage on HS. . . . . . . . . . . . . . . .(Repetitive Transient) -5V to 105V
Voltage on HB . . . V HS +8V to V HS +14.0V and V DD -1V to V DD +100V
HS Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <50V/ns
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
3. The HIP2100 is capable of derated operation at supply voltages exceeding 14V. Figure 16 shows the high-side voltage derating curve for this
mode of operation.
4. All voltages referenced to V SS unless otherwise specified.
5. θ JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
6. θ JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. θ JC, the
“case temp” is measured at the center of the exposed metal pad on the package underside. See Tech Brief TB379.
Electrical Specifications
V DD = V HB = 12V, V SS = V HS = 0V, No Load on LO or HO, Unless Otherwise Specified.
T J = +25°C
T J = -40°C TO +125°C
MIN
MAX
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN TYP MAX
(Note 7)
(Note 7)
UNITS
SUPPLY CURRENTS
V DD Quiescent Current
V DD Operating Current
Total HB Quiescent Current
Total HB Operating Current
HB to V SS Current, Quiescent
HB to V SS Current, Operating
I DD
I DDO
I HB
I HBO
I HBS
I HBSO
LI = HI = 0V
f = 500kHz
LI = HI = 0V
f = 500kHz
V HS = V HB = 114V
f = 500kHz
-
-
-
-
-
-
0.1
1.5
0.1
1.5
0.05
0.7
0.15
2.5
0.15
2.5
1
-
-
-
-
-
-
-
0.2
3
0.2
3
10
-
mA
mA
mA
mA
μA
mA
INPUT PINS
Low Level Input Voltage Threshold
High Level Input Voltage Threshold
Input Voltage Hysteresis
Input Pulldown Resistance
V IL
V IH
V IHYS
R I
4
-
-
-
5.4
5.8
0.4
200
-
7
-
-
3
-
-
100
-
8
-
500
V
V
V
k Ω
UNDERVOLTAGE PROTECTION
V DD Rising Threshold
V DD Threshold Hysteresis
HB Rising Threshold
HB Threshold Hysteresis
V DDR
V DDH
V HBR
V HBH
7
-
6.5
-
7.3
0.5
6.9
0.4
7.8
-
7.5
-
6.5
-
6
-
8
-
8
-
V
V
V
V
4
FN4022.14
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