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参数资料
| 型号： | HIP2123FRTBZ |
| 厂商： | Intersil |
| 文件页数： | 6/16页 |
| 文件大小： | 0K |
| 描述： | IC INTERFACE |
| 标准包装： | 75 |
| 系列： | * |
HIP2122, HIP2123
Electrical Specifications V DD = V HB = 12V, V SS = V HS = 0V, R DT = 0 K , PWM= 0V, No Load on LO or HO, Unless Otherwise Specified.
Boldface limits apply over the operating temperature range, -40°C to +125°C.
T A = +25°C
T A = -40°C to +125°C
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
MIN (Note 9) MAX (Note 9)
UNITS
Input Voltage Hysteresis
Input Pull-down Resistance
V IHYS
R I
HIP2122 (CMOS)
-
-
2.2
210
-
-
-
100
-
500
V
k Ω
UNDERVOLTAGE PROTECTION
V DD Rising Threshold
V DD Threshold Hysteresis
HB Rising Threshold
HB Threshold Hysteresis
V DDR
V DDH
V HBR
V HBH
6.8
-
6.2
-
7.3
0.6
6.9
0.6
7.8
-
7.5
-
6.5
-
5.9
-
8.1
-
7.8
-
V
V
V
V
BOOTSTRAP DIODE
Low Current Forward Voltage
High Current Forward Voltage
Dynamic Resistance
V DL
V DH
R D
I VDD-HB = 100mA
I VDD-HB = 100mA
I VDD-HB = 100mA
-
-
-
0.6
0.7
0.8
0.7
0.9
1
-
-
-
0.8
1
1.5
V
V
Ω
LO GATE DRIVER
Low Level Output Voltage
High Level Output Voltage
Peak Pull-Up Current
Peak Pull-Down Current
V OLL
V OHL
I OHL
I OLL
I LO = 100mA
I LO = -100mA, V OHL = V DD - V LO
V LO = 0V
V LO = 12V
-
-
-
-
0.25
0.25
2
2
0.4
0.4
-
-
-
-
-
-
0.5
0.5
-
-
V
V
A
A
HO GATE DRIVER
Low Level Output Voltage
High Level Output Voltage
Peak Pull-Up Current
Peak Pull-Down Current
V OLH
V OHH
I OHH
I OLH
I HO = 100mA
I HO = -100mA, V OHH = V HB - V HO
V HO = 0V
V HO = 12V
-
-
-
-
0.25
0.25
2
2
0.4
0.4
-
-
-
-
-
-
0.5
0.5
-
-
V
V
A
A
6
FN7670.0
December 23, 2011
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| HIP2123FRTBZ-T | 功能描述:功率驱动器IC 100V 2A PEAK HALF BRDG DRV W/DELAY TMR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP22100IB | 制造商:Intersil Corporation 功能描述: |
| HIP2500 | 制造商:HARRIS 制造商全称:HARRIS 功能描述:Half Bridge 500VDC Driver |
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| HIP-2500IB | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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