参数资料
型号: HIP6003
厂商: Intersil Corporation
英文描述: Buck Pulse-Width Modulator (PWM) Controller and Output Voltage Monitor
中文描述: 降压脉宽调制(PWM)控制器和输出电压监视器
文件页数: 9/12页
文件大小: 208K
代理商: HIP6003
9
capacitor’s impedance with frequency to select a suitable
component. In most cases, multiple electrolytic capacitors of
small case size perform better than a single large case
capacitor.
Output Inductor Selection
The output inductor is selected to meet the output voltage
ripple requirements and minimize the converter’s response
time to the load transient. The inductor value determines the
converter’s ripple current and the ripple voltage is a function
of the ripple current. The ripple voltage and current are
approximated by the following equations:
Increasing the value of inductance reduces the ripple current
and voltage. However, the large inductance values reduce
the converter’s response time to a load transient.
One of the parameters limiting the converter’s response to a
load transient is the time required to change the inductor
current. Given a sufficiently fast control loop design, the
HIP6003 will provide either 0% or 100% duty cycle in
response to a load transient. The response time is the time
required to slew the inductor current from an initial current
value to the transient current level. During this interval the
difference between the inductor current and the transient
current level must be supplied by the output capacitor.
Minimizing the response time can minimize the output
capacitance required.
The response time to a transient is different for the
application of load and the removal of load. The following
equations give the approximate response time interval for
application and removal of a transient load:
where: I
TRAN
is the transient load current step, t
RISE
is the
response time to the application of load, and t
FALL
is the
response time to the removal of load. With a +5V input
source, the worst case response time can be either at the
application or removal of load and dependent upon the
DACOUT setting. Be sure to check both of these equations
at the minimum and maximum output levels for the worst
case response time. With a +12V input, and output voltage
level equal to DACOUT, t
FALL
is the longest response time.
Input Capacitor Selection
Use a mix of input bypass capacitors to control the voltage
overshoot across the MOSFETs. Use small ceramic
capacitors for high frequency decoupling and bulk capacitors
to supply the current needed each time Q1 turns on. Place
the small ceramic capacitors physically close to the
MOSFETs and between the drain of Q1 and the anode of
Schottky diode D2.
The important parameters for the bulk input capacitor are the
voltage rating and the RMS current rating. For reliable
operation, select the bulk capacitor with voltage and current
ratings above the maximum input voltage and largest RMS
current required by the circuit. The capacitor voltage rating
should be at least 1.25 times greater than the maximum
input voltage and a voltage rating of 1.5 times is a
conservative guideline. The RMS current rating requirement
for the input capacitor of a buck regulator is approximately
1/2 the DC load current.
For a through hole design, several electrolytic capacitors
(Panasonic HFQ series or Nichicon PL series or Sanyo MV-
GX or equivalent) may be needed. For surface mount
designs, solid tantalum capacitors can be used, but caution
must be exercised with regard to the capacitor surge current
rating. These capacitors must be capable of handling the
surge-current at power-up. The TPS series available from
AVX, and the 593D series from Sprague are both surge
current tested.
MOSFET Selection/Considerations
The HIP6003 requires an N-channel power MOSFET. It
should be selected based upon r
DS(ON)
, gate supply
requirements, and thermal management requirements.
In high-current applications, the MOSFET power dissipation,
package selection and heatsink are the dominant design
factors. The power dissipation includes two loss components;
conduction loss and switching loss. The conduction losses are
the largest component of power dissipation for the MOSFET.
Switching losses also contribute to the overall MOSFET power
loss (see the equations below). These equations assume linear
voltage-current transitions and are approximations. The gate-
chargelossesaredissipatedbytheHIP6003anddon'theatthe
MOSFET. However, large gate-charge increases the switching
interval, t
SW
, which increases the upper MOSFET switching
losses.EnsurethattheMOSFETiswithinitsmaximumjunction
temperature at high ambient temperature by calculating the
temperature rise according to package thermal-resistance
specifications. A separate heatsink may be necessary
depending upon MOSFET power, package type, ambient
temperature and air flow.
Standard-gate MOSFETs are normally recommended for
use with the HIP6003. However, logic-level gate MOSFETs
can be used under special circumstances. The input voltage,
upper gate drive level, and the MOSFETs absolute gate-to-
I =
V
- V
-------------------------------
V
IN
---------------
V
OUT
=
I x ESR
t
RISE
=
L
x I
IN
OUT
-------------------------------
t
FALL
=
L
x I
OUT
-------------------------------
P
COND
= I
O
2
x r
DS ON
)
x D
P
SW
=1
2
--
I
O
x V
IN
x t
SW
x Fs
Where: D is the duty cycle + V
OUT
/V
IN
,
t
SW
is the switching interval, and
Fs is the switching frequency
HIP6003
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