参数资料
| 型号： | HIP6004ECV |
| 厂商： | Intersil |
| 文件页数： | 10/13页 |
| 文件大小： | 0K |
| 描述： | IC CTRLR PWM VOLTAGE MON 20TSSOP |
| 标准包装： | 74 |
| 应用： | 控制器，Intel VRM8.5 |
| 输入电压： | 5V，12V |
| 输出数： | 1 |
| 输出电压： | 1.05 V ~ 1.825 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | * |
| 封装/外壳： | 20-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | * |
| 包装： | 管件 |
HIP6004E
within their maximum junction temperature at high ambient
temperature by calculating the temperature rise according to
package thermal-resistance specifications. A separate heatsink
may be necessary depending upon MOSFET power, package
type, ambient temperature and air flow.
+12V
V CC
+5V OR LESS
P UPPER = Io 2 x r DS(ON) x D +
1 Io x V
2
IN x t SW x F S
HIP6004E
BOOT
P LOWER = Io 2 x r DS(ON) x (1 - D)
Where: D is the duty cycle = V OUT / V IN ,
t SW is the switch ON time, and
UGATE
PHASE
Q 1
NOTE:
V G-S ≈ V CC -5V
F S is the switching frequency.
Standard-gate MOSFETs are normally recommended for
use with the HIP6004E. However, logic-level gate MOSFETs
-
+
LGATE
PGND
GND
Q 2
D 2
NOTE:
V G-S ≈ V CC
can be used under special circumstances. The input voltage,
upper gate drive level, and the MOSFET’s absolute gate-to-
source voltage rating determine whether logic-level
MOSFETs are appropriate.
Figure 9 shows the upper gate drive (BOOT pin) supplied by a
bootstrap circuit from V CC . The boot capacitor, C BOOT
develops a floating supply voltage referenced to the PHASE
pin. This supply is refreshed each cycle to a voltage of V CC
less the boot diode drop (V D ) when the lower MOSFET, Q 2
turns on. Logic-level MOSFETs can only be used if the
MOSFET’s absolute gate-to-source voltage rating exceeds
the maximum voltage applied to VCC.
+12V
D BOOT
FIGURE 10. UPPER GATE DRIVE - DIRECT V CC DRIVE OPTION
VCC
+ V D -
BOOT
+5V OR +12V
HIP6004E
UGATE
PHASE
C BOOT
Q1
NOTE:
V G-S ≈ V CC -V D
-
+
LGATE
PGND
Q2
D2
NOTE:
V G-S ≈ V CC
GND
FIGURE 9. UPPER GATE DRIVE - BOOTSTRAP OPTION
Figure 10 shows the upper gate drive supplied by a direct
connection to V CC . This option should only be used in
converter systems where the main input voltage is +5V DC or
less. The peak upper gate-to-source voltage is approximately
V CC less the input supply. For +5V main power and +12V DC
for the bias, the gate-to-source voltage of Q 1 is 7V. A logic-
level MOSFET is a good choice for Q 1 and a logic-level
MOSFET can be used for Q 2 if its absolute gate-to-source
voltage rating exceeds the maximum voltage applied to V CC .
10
相关PDF资料 |
PDF描述 |
|---|---|
| HIP6004BCB | IC CTRLR PWM VOLTAGE MON 20-SOIC |
| UVK2V3R3MPD | CAP ALUM 3.3UF 350V 20% RADIAL |
| AHA476M50X16T-F | CAP ALUM 47UF 50V 20% SMD |
| HIP6004ECB-T | IC CTRLR PWM VOLTAGE MON 20-SOIC |
| AHA336M50X16T-F | CAP ALUM 33UF 50V 20% SMD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HIP6004ECV-T | 功能描述:IC CTRLR PWM VOLTAGE MON 20TSSOP RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - 专用型 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,000 系列:- 应用:电源，ICERA E400，E450 输入电压:4.1 V ~ 5.5 V 输出数:10 输出电压:可编程 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:42-WFBGA，WLCSP 供应商设备封装:42-WLP 包装:带卷 (TR) |
| HIP6004ECVZ | 功能描述:电压模式 PWM 控制器 20LD BUCK & SYNCHCT PWMCONT & OUTPUT RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
| HIP6004ECVZ-T | 功能描述:电压模式 PWM 控制器 20LD BUCK&SYNCHCT PWMCONOUTPUT RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
| HIP6004EVAL1 | 功能描述:EVALUATION BOARD HIP6004 RoHS:否 类别:编程器，开发系统 >> 过时/停产零件编号 系列:- 标准包装:1 系列:- 传感器类型:CMOS 成像，彩色（RGB） 传感范围:WVGA 接口:I²C 灵敏度:60 fps 电源电压:5.7 V ~ 6.3 V 嵌入式:否 已供物品:成像器板 已用 IC / 零件:KAC-00401 相关产品:4H2099-ND - SENSOR IMAGE WVGA COLOR 48-PQFP4H2094-ND - SENSOR IMAGE WVGA MONO 48-PQFP |
| HIP6004EVAL3 | 功能描述:电源管理IC开发工具 EMBEDDED EVAL BRD SYNC BUCK/KLAM RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V |
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