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参数资料
| 型号： | HIP6013CB |
| 厂商： | INTERSIL CORP |
| 元件分类： | 稳压器 |
| 英文描述： | FPGA - 100000 SYSTEM GATE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | SWITCHING CONTROLLER, 1000 kHz SWITCHING FREQ-MAX, PDSO14 |
| 封装： | SOIC-14 |
| 文件页数： | 9/11页 |
| 文件大小： | 103K |
| 代理商： | HIP6013CB |
2-170
operation, select the bulk capacitor with voltage and current
ratings above the maximum input voltage and largest RMS
current required by the circuit. The capacitor voltage rating
should be at least 1.25 times greater than the maximum
input voltage and a voltage rating of 1.5 times is a
conservative guideline. The RMS current rating requirement
for the input capacitor of a buck regulator is approximately
1/2 the DC load current.
For a through hole design, several electrolytic capacitors
(Panasonic HFQ series or Nichicon PL series or Sanyo MV-
GX or equivalent) may be needed. For surface mount
designs, solid tantalum capacitors can be used, but caution
must be exercised with regard to the capacitor surge current
rating. These capacitors must be capable of handling the
surge-current at power-up. The TPS series available from
AVX, and the 593D series from Sprague are both surge
current tested.
MOSFET Selection/Considerations
The HIP6013 requires an N-Channel power MOSFET. It
should be selected based upon r
DS(ON)
, gate supply
requirements, and thermal management requirements.
In high-current applications, the MOSFET power
dissipation, package selection and heatsink are the
dominant design factors. The power dissipation includes
two loss components; conduction loss and switching loss.
The conduction losses are the largest component of power
dissipation for the MOSFET. Switching losses also
contribute to the overall MOSFET power loss (see the
equations below). These equations assume linear voltage-
current transitions and are approximations. The gate-
charge losses are dissipated by the HIP6013 and don't
heat the MOSFET. However, large gate-charge increases
the switching interval, t
SW
, which increases the upper
MOSFET switching losses. Ensure that the MOSFET is
within its maximum junction temperature at high ambient
temperature by calculating the temperature rise according
to package thermal-resistance specifications. A separate
heatsink may be necessary depending upon MOSFET
power, package type, ambient temperature and air flow.
P
COND
= I
O2
x r
DS(ON)
x D
Standard-gate MOSFETs are normally recommended for
use with the HIP6013. However, logic-level gate MOSFETs
can be used under special circumstances. The input voltage,
upper gate drive level, and the MOSFET’s absolute gate-to-
source voltage rating determine whether logic-level
MOSFETs are appropriate.
Figure 9 shows the upper gate drive (BOOT pin) supplied by
a bootstrap circuit from V
CC
. The boot capacitor, C
BOOT
develops a floating supply voltage referenced to the PHASE
pin. This supply is refreshed each cycle to a voltage of V
CC
less the boot diode drop (V
D
) when the lower MOSFET, Q2
turns on. A logic-level MOSFET can only be used for Q1 if
the MOSFET’s absolute gate-to-source voltage rating
exceeds the maximum voltage applied to V
CC
.
Figure 10 shows the upper gate drive supplied by a direct
connection to VCC. This option should only be used in
converter systems where the main input voltage is +5VDC
or less. The peak upper gate-to-source voltage is
approximately V
CC
less the input supply. For +5V main
power and +12VDC for the bias, the gate-to-source voltage
of Q1 is 7V. A logic-level MOSFET is a good choice for Q1
and a logic-level MOSFET is a good choice for Q1 under
these conditions.
P
SW
=1
2I
O
x V
IN
x t
SW
x Fs
Where: D is the duty cycle = V
O
/ V
IN
,
t
SW
is the switching interval, and
Fs is the switching frequency.
FIGURE 9. UPPER GATE DRIVE - BOOTSTRAP OPTION
+12V
HIP6013
GND
UGATE
PHASE
BOOT
VCC
+5V OR +12V
C
BOOT
D
BOOT
Q1
D2
NOTE:
V
G-S
≈
V
CC
- V
D
+
-
HIP6013
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HIP6013CB-T | 功能描述:IC CONTROLLER PWM BUCK 14-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - 专用型 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,000 系列:- 应用:电源，ICERA E400，E450 输入电压:4.1 V ~ 5.5 V 输出数:10 输出电压:可编程 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:42-WFBGA，WLCSP 供应商设备封装:42-WLP 包装:带卷 (TR) |
| HIP6013CBZ | 功能描述:电压模式 PWM 控制器 STD BUCK PWM/1 5%/14 RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
| HIP6013CBZ-T | 功能描述:电压模式 PWM 控制器 STD BUCK PWM/1 5%/14 RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
| HIP6014 | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Buck and Synchronous-Rectifier (PWM) Controller and Output Voltage Monitor |
| HIP6014CB | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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