参数资料
型号: HIP6019BCBZ-T
厂商: Intersil
文件页数: 5/15页
文件大小: 0K
描述: IC REG QD BCK/LINEAR 28-SOIC
标准包装: 1,000
拓扑: 降压(降压)同步(2),线性(LDO)(2)
功能: 任何功能
输出数: 4
频率 - 开关: 215kHz
电压/电流 - 输出 1: 控制器
电压/电流 - 输出 2: 控制器
电压/电流 - 输出 3: 控制器
带 LED 驱动器:
带监控器:
带序列发生器:
电源电压: 5 V ~ 12 V
工作温度: 0°C ~ 70°C
安装类型: *
封装/外壳: 28-SOIC(0.295",7.50mm 宽)
供应商设备封装: *
包装: 带卷 (TR)
HIP6019B
Electrical Specifications
Recommended Operating Conditions, Unless Otherwise Noted.
Refer to Figures 1, 2 and 3 (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
PWM CONTROLLER ERROR AMPLIFIERS
DC Gain
-
88
-
dB
Gain-Bandwidth Product
GBWP
-
15
-
MHz
Slew Rate
SR
COMP = 10pF
-
6
-
V/ μ s
PWM CONTROLLER GATE DRIVERS
Drive1 (and 2) Source
Drive1 (and 2) Sink
Lower Gate Source
Lower Gate Sink
I UGATE
R UGATE
I LGATE
R LGATE
VCC = 12V, V UGATE1 (or V GATE2 ) = 6V
V GATE-PHASE = 1V
VCC = 12V, V LGATE = 1V
V GATE = 1V
-
-
-
-
1
1.7
1
1.4
-
3.5
-
3.0
A
?
A
?
PROTECTION
V OUT1 Over-Voltage Trip
V OUT2 Over-Voltage Trip
VSEN2 Input Resistance
VSEN1 Rising
VSEN2 Rising
112
4.1
-
115
4.3
70
118
4.5
-
%
V
k ?
FAULT Sourcing Current
OCSET1(and 2) Current Source
Soft-Start Current
Chip Shutdown Soft-Start Threshold
I OVP
I OCSET
I SS
V FAULT/RT = 10.0V
V OCSET = 4.5V DC
10
170
-
-
14
200
11
-
-
230
-
1.0
mA
μ A
μ A
V
POWER GOOD
V OUT1 Upper Threshold
V OUT1 Under-Voltage
V OUT1 Hysteresis
V OUT2 Under-Voltage
V OUT2 Under-Voltage Hysteresis
VSEN1 Rising
VSEN1 Rising
Upper/Lower Threshold
VSEN2 Rising
108
92
-
2.45
-
-
-
2
2.55
100
110
94
-
2.65
-
%
%
%
V
mV
PGOOD Voltage Low
V PGOOD
I PGOOD = -4mA
-
-
0.5
V
Typical Performance Curves
140
120
C UGATE1 = C UGATE2 = C LGATE1 = C GATE
V VCC = 12V, V IN = 5V
C GATE = 4800p F
1000
R T PULLUP
100
TO +12V
80
100
60
C GATE = 3600pF
C GATE = 1500p F
10
R T PULLDOWN TO V SS
40
20
C GATE = 660p F
10
100
1000
100
200
300
400
500
600
700
800
900
1000
SWITCHING FREQUENCY (kHz)
FIGURE 4. R T RESISTANCE vs FREQUENCY
5
SWITCHING FREQUENCY (kHz)
FIGURE 5. BIAS SUPPLY CURRENT vs FREQUENCY
FN4587.1
April 13, 2005
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