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参数资料
| 型号： | HIP6500BCB |
| 厂商： | INTERSIL CORP |
| 元件分类： | 电源管理 |
| 英文描述： | Multiple Linear Power Controller with ACPI Control Interface |
| 中文描述： | 9-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO20 |
| 封装： | PLASTIC, SOIC-20 |
| 文件页数： | 13/15页 |
| 文件大小： | 156K |
| 代理商： | HIP6500BCB |
13
Transistor Selection/Considerations
The HIP6500B usually requires one P-Channel (or bipolar
PNP), two N-Channel MOSFETs and two bipolar NPN
transistors.
One important criteria for selection of transistors for all the
linear regulators/switching elements is package selection for
efficient removal of heat. The power dissipated in a linear
regulator/switching element is
Select a package and heatsink that maintains the junction
temperature below the rating with the maximum expected
ambient temperature.
Q1
The active element on the 2.5V/3.3V
MEM
output has
different requirements for each of the two voltage settings. In
2.5V systems utilizing RDRAM (or voltage-compatible)
memory, Q1 has to be a bipolar NPN capable of conducting
up to 7.5A and exhibit a current gain (h
fe
) of minimum 40 at
this current and 0.7V V
CE
; in such systems the 2.5V output
is actively regulated while in active state. In 3.3V systems
(SDRAM or compatible) Q1 has to be an N-Channel
MOSFET; in such systems the MOSFET is switched on
during active state (S0, S1). The main criteria for the
selection of this transistor is output voltage budgeting. The
maximum r
DS(ON)
allowed at highest junction temperature
can be expressed with the following equation:
V
OUTmax
, where
V
INmin
- minimum input voltage
V
OUTmin
- minimum output voltage allowed
I
OUTmax
- maximum output current
The gate bias available for this MOSFET is of the order of 8V.
Q5
If a P-Channel MOSFET is used to switch the 5VSB output
of the ATX supply into the 5V
DUAL
output during S3 and S5
states (as dictated by EN5VDL status), then, similar to the
situation where Q1 is a MOSFET, the selection criteria of this
device is also proper voltage budgeting. The maximum
r
DS(ON)
, however, has to be achieved with only 4.5V of V
GS
,
so a logic level MOSFET needs to be selected. If a PNP
device is chosen to perform this function, it has to have a low
saturation voltage while providing the maximum sleep
current and have a current gain sufficiently high to be
saturated using the minimum drive current (typically 20mA).
Q3, Q4
The two N-Channel MOSFETs are used to switch the 3.3V
and 5V inputs provided by the ATX supply into the
3.3VDUAL and 5VDUAL outputs, respectively, while in active
(S0, S1) state. Similar r
DS(ON)
criteria apply in these cases
as well. Unlike the PMOS, however, these NMOS transistors
get the benefit of an increased V
GS
drive (approximately 8V
and 7V, respectively).
Q2
The NPN transistor used as sleep state pass element (Q2)
on the 3.3V
DUAL
output has to have a minimum current gain
of 100 at 1.5V V
CE
and 500mA I
CE
throughout the in-circuit
operating temperature range.
P
LINEAR
I
O
V
IN
V
OUT
–
(
)
×
=
r
DS ON
)
max
V
–
--------------------------------------------------
=
HIP6500B
相关PDF资料 |
PDF描述 |
|---|---|
| HIP6500BEVAL1 | Multiple Linear Power Controller with ACPI Control Interface |
| HIP6500 | Multiple Linear Power Controller with ACPI Control Interface |
| HIP6500CB | Multiple Linear Power Controller with ACPI Control Interface |
| HIP6500EVAL1 | Multiple Linear Power Controller with ACPI Control Interface |
| HIP6501 | Triple Linear Power Controller with ACPI Control Interface |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HIP6500BCB WAF | 制造商:Harris Corporation 功能描述: |
| HIP6500BCB-T | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HIP6500BCB-TS2490 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HIP6500BEVAL1 | 功能描述:EVALUATION BOARD HIP6500 RoHS:否 类别:编程器，开发系统 >> 过时/停产零件编号 系列:- 标准包装:1 系列:- 传感器类型:CMOS 成像，彩色（RGB） 传感范围:WVGA 接口:I²C 灵敏度:60 fps 电源电压:5.7 V ~ 6.3 V 嵌入式:否 已供物品:成像器板 已用 IC / 零件:KAC-00401 相关产品:4H2099-ND - SENSOR IMAGE WVGA COLOR 48-PQFP4H2094-ND - SENSOR IMAGE WVGA MONO 48-PQFP |
| HIP6500CB | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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