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| 型号： | HIP6501ACBZ-T |
| 厂商： | Intersil |
| 文件页数： | 12/14页 |
| 文件大小： | 0K |
| 描述： | IC PWR SUPPLY CONTROLLER 16SOIC |
| 标准包装： | 2,500 |
| 应用： | 电源控制器 |
| 电源电压： | 5V，12V |
| 电流 - 电源： | 20mA |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 16-SOIC |
| 包装： | 带卷 (TR) |
HIP6501A
Q4
If a P-Channel MOSFET is used to switch the 5VSB output
of the ATX supply into the 5V DUAL output during S3 and
S4/S5 states (as dictated by EN5VDL status), then, similar to
the situation where Q1 is a MOSFET, the selection criteria of
this device is also proper voltage budgeting. The maximum
r DS(ON) , however, has to be achieved with only 4.5V of V GS ,
so a logic level MOSFET needs to be selected. If a PNP
device is chosen to perform this function, it has to have a low
saturation voltage while providing the maximum sleep-state
current and have a current gain sufficiently high to be
saturated using the minimum drive current (typically 20mA;
4mA during soft-start).
12
Q3, Q5
The two N-Channel MOSFETs are used to switch the 3.3V
and 5V inputs provided by the ATX supply into the
3.3VDUAL and 5VDUAL outputs, respectively, while in
active (S0, S1) states. Similar r DS(ON) criteria apply in these
cases as well, unlike the PMOS, however, these NMOS
transistors get the benefit of an increased V GS drive
(approximately 8V and 7V, respectively).
Q2
The NPN transistor used as sleep-state pass element on the
3.3V DUAL output must have a minimum current gain of 100
at V CE = 1.5V, and I CE = 500mA throughout the in-circuit
operating temperature range.
FN4749.6
December 30, 2004
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