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参数资料
| 型号： | HIP6601B |
| 厂商： | Intersil Corporation |
| 英文描述： | Synchronous Rectified Buck MOSFET Drivers |
| 中文描述： | 同步整流降压MOSFET驱动器 |
| 文件页数： | 5/11页 |
| 文件大小： | 346K |
| 代理商： | HIP6601B |
5
FN9072.7
July 20, 2005
Functional Pin Description
UGATE (Pin 1), (Pin 16 QFN)
Upper gate drive output. Connect to gate of high-side power
N-Channel MOSFET.
BOOT (Pin 2), (Pin 2 QFN)
Floating bootstrap supply pin for the upper gate drive.
Connect a bootstrap capacitor between this pin and the
PHASE pin. The bootstrap capacitor provides the charge to
turn on the upper MOSFET. A resistor in series with boot
capacitor is required in certain applications to reduce ringing
on the BOOT pin. See the Internal Bootstrap Device section
under DESCRIPTION for guidance in choosing the
appropriate capacitor and resistor values.
PWM (Pin 3), (Pin 3 QFN)
The PWM signal is the control input for the driver. The PWM
signal can enter three distinct states during operation, see the
three-state PWM Input section under DESCRIPTION for further
details. Connect this pin to the PWM output of the controller.
GND (Pin 4), (Pin 4 QFN)
Bias and reference ground. All signals are referenced to
this node.
PGND (Pin 5 QFN Package Only)
This pin is the power ground return for the lower gate driver.
LGATE (Pin 5), (Pin 7 QFN)
Lower gate drive output. Connect to gate of the low-side
power N-Channel MOSFET.
VCC (Pin 6), (Pin 9 QFN)
Connect this pin to a +12V bias supply. Place a high quality
bypass capacitor from this pin to GND.
LVCC (Pin 10 QFN Package Only)
Lower gate driver supply voltage.
PVCC (Pin 7), (Pin 11 QFN)
For the HIP6601B and the HIP6604B, this pin supplies the
upper gate drive bias. Connect this pin from +12V down to +5V.
For the HIP6603B, this pin supplies both the upper and
lower gate drive bias. Connect this pin to either +12V or +5V.
PHASE (Pin 8), (Pin 14 QFN)
Connect this pin to the source of the upper MOSFET and the
drain of the lower MOSFET. The PHASE voltage is
monitored for adaptive shoot-through protection. This pin
also provides a return path for the upper gate drive.
Description
Operation
Designed for versatility and speed, the HIP6601B, HIP6603B
and HIP6604B dual MOSFET drivers control both high-side
and low-side N-Channel FETs from one externally provided
PWM signal.
The upper and lower gates are held low until the driver is
initialized. Once the VCC voltage surpasses the VCC Rising
Threshold (See
Electrical Specifications
), the PWM signal
takes control of gate transitions. A rising edge on PWM
initiates the turn-off of the lower MOSFET (see
Timing
Diagram
). After a short propagation delay [t
PDLLGATE
], the
lower gate begins to fall. Typical fall times [t
FLGATE
] are
provided in the
Electrical Specifications
section. Adaptive
shoot-through circuitry monitors the LGATE voltage and
determines the upper gate delay time [t
PDHUGATE
] based
on how quickly the LGATE voltage drops below 2.2V. This
prevents both the lower and upper MOSFETs from
conducting simultaneously or shoot-through. Once this delay
period is complete the upper gate drive begins to rise
[t
RUGATE
] and the upper MOSFET turns on.
Timing Diagram
PWM
UGATE
LGATE
t
PDLLGATE
t
FLGATE
t
PDHUGATE
t
RUGATE
t
PDLUGATE
t
FUGATE
t
PDHLGATE
t
RLGATE
HIP6601B, HIP6603B, HIP6604B
相关PDF资料 |
PDF描述 |
|---|---|
| HIP6601BCB | Synchronous Rectified Buck MOSFET Drivers |
| HIP6601BCB-T | Synchronous Rectified Buck MOSFET Drivers |
| HIP6604B | FPGA 2000000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN |
| HIP6604BCR | FPGA 2000000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN |
| HIP6603B | Synchronous Rectified Buck MOSFET Drivers |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HIP6601BCB | 功能描述:IC DRIVER MOSFET DUAL 8-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| HIP6601BCB-T | 功能描述:IC DRVR MOSFET SYNC BUCK 8-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| HIP6601BCBZ | 功能描述:功率驱动器IC SYNCH-RECT BUCK FET DRVR W/REDUCED POR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP6601BCBZ | 制造商:Intersil Corporation 功能描述:MOSFET Driver IC |
| HIP6601BCBZA | 功能描述:功率驱动器IC W/ANNEAL SYNCH-RECT BUCK FET DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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