- 您现在的位置：买卖IC网 > PDF目录371822 > HIP6601B (Intersil Corporation) Synchronous Rectified Buck MOSFET Drivers PDF资料下载
参数资料
| 型号： | HIP6601B |
| 厂商： | Intersil Corporation |
| 英文描述： | Synchronous Rectified Buck MOSFET Drivers |
| 中文描述： | 同步整流降压MOSFET驱动器 |
| 文件页数： | 6/11页 |
| 文件大小： | 346K |
| 代理商： | HIP6601B |
6
FN9072.7
July 20, 2005
A falling transition on PWM indicates the turn-off of the upper
MOSFET and the turn-on of the lower MOSFET. A short
propagation delay [t
PDLUGATE
] is encountered before the
upper gate begins to fall [t
FUGATE
]. Again, the adaptive
shoot-through circuitry determines the lower gate delay time,
t
PDHLGATE
. The PHASE voltage is monitored and the lower
gate is allowed to rise after PHASE drops below 0.5V. The
lower gate then rises [t
RLGATE
], turning on the lower
MOSFET.
Three-State PWM Input
A unique feature of the HIP660X drivers is the addition of a
shutdown window to the PWM input. If the PWM signal
enters and remains within the shutdown window for a set
holdoff time, the output drivers are disabled and both
MOSFET gates are pulled and held low. The shutdown state
is removed when the PWM signal moves outside the
shutdown window. Otherwise, the PWM rising and falling
thresholds outlined in the
Electrical Specifications
determine
when the lower and upper gates are enabled.
Adaptive Shoot-Through Protection
Both drivers incorporate adaptive shoot-through protection
to prevent upper and lower MOSFETs from conducting
simultaneously and shorting the input supply. This is
accomplished by ensuring the falling gate has turned off one
MOSFET before the other is allowed to rise.
During turn-off of the lower MOSFET, the LGATE voltage is
monitored until it reaches a 2.2V threshold, at which time the
UGATE is released to rise. Adaptive shoot-through circuitry
monitors the PHASE voltage during UGATE turn-off. Once
PHASE has dropped below a threshold of 0.5V, the LGATE
is allowed to rise. PHASE continues to be monitored during
the lower gate rise time. If PHASE has not dropped below
0.5V within 250ns, LGATE is taken high to keep the
bootstrap capacitor charged. If the PHASE voltage exceeds
the 0.5V threshold during this period and remains high for
longer than 2
μ
s, the LGATE transitions low. Both upper and
lower gates are then held low until the next rising edge of the
PWM signal.
Power-On Reset (POR) Function
During initial start-up, the VCC voltage rise is monitored and
gate drives are held low until a typical VCC rising threshold
of 9.95V is reached. Once the rising VCC threshold is
exceeded, the PWM input signal takes control of the gate
drives. If VCC drops below a typical VCC falling threshold of
7.6V during operation, then both gate drives are again held
low. This condition persists until the VCC voltage exceeds
the VCC rising threshold.
Internal Bootstrap Device
The HIP6601B, HIP6603B, and HIP6604B drivers all feature
an internal bootstrap device. Simply adding an external
capacitor across the BOOT and PHASE pins completes the
bootstrap circuit.
The bootstrap capacitor must have a maximum voltage
rating above VCC + 5V. The bootstrap capacitor can be
chosen from the following equation:
Where Q
GATE
is the amount of gate charge required to fully
charge the gate of the upper MOSFET. The
V
BOOT
term is
defined as the allowable droop in the rail of the upper drive.
As an example, suppose a HUF76139 is chosen as the
upper MOSFET. The gate charge, Q
GATE
, from the data
sheet is 65nC for a 10V upper gate drive. We will assume a
200mV droop in drive voltage over the PWM cycle. We find
that a bootstrap capacitance of at least 0.325
μ
F is required.
The next larger standard value capacitance is 0.33
μ
F.
In applications which require down conversion from +12V or
higher and PVCC is connected to a +12V source, a boot
resistor in series with the boot capacitor is required. The
increased power density of these designs tend to lead to
increased ringing on the BOOT and PHASE nodes, due to
faster switching of larger currents across given circuit
parasitic elements. The addition of the boot resistor allows
for tuning of the circuit until the peak ringing on BOOT is
below 29V from BOOT to GND and 17V from BOOT to VCC.
A boot resistor value of 5
typically meets this criteria.
In some applications, a well tuned boot resistor reduces the
ringing on the BOOT pin, but the PHASE to GND peak
ringing exceeds 17V. A gate resistor placed in the UGATE
trace between the controller and upper MOSFET gate is
recommended to reduce the ringing on the PHASE node by
slowing down the upper MOSFET turn-on. A gate resistor
value between 2
to 10
typically reduces the PHASE to
GND peak ringing below 17V.
Gate Drive Voltage Versatility
The HIP6601B and HIP6603B provide the user total
flexibility in choosing the gate drive voltage. The HIP6601B
lower gate drive is fixed to VCC [+12V], but the upper drive
rail can range from 12V down to 5V depending on what
voltage is applied to PVCC. The HIP6603B ties the upper
and lower drive rails together. Simply applying a voltage
from 5V up to 12V on PVCC will set both driver rail voltages.
Power Dissipation
Package power dissipation is mainly a function of the
switching frequency and total gate charge of the selected
MOSFETs. Calculating the power dissipation in the driver for
a desired application is critical to ensuring safe operation.
Exceeding the maximum allowable power dissipation level
will push the IC beyond the maximum recommended
operating junction temperature of 125°C. The maximum
allowable IC power dissipation for the SO8 package is
approximately 800mW. When designing the driver into an
application, it is recommended that the following calculation
C
BOOT
Q
BOOT
-----------------------
≥
HIP6601B, HIP6603B, HIP6604B
相关PDF资料 |
PDF描述 |
|---|---|
| HIP6601BCB | Synchronous Rectified Buck MOSFET Drivers |
| HIP6601BCB-T | Synchronous Rectified Buck MOSFET Drivers |
| HIP6604B | FPGA 2000000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN |
| HIP6604BCR | FPGA 2000000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN |
| HIP6603B | Synchronous Rectified Buck MOSFET Drivers |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HIP6601BCB | 功能描述:IC DRIVER MOSFET DUAL 8-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| HIP6601BCB-T | 功能描述:IC DRVR MOSFET SYNC BUCK 8-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| HIP6601BCBZ | 功能描述:功率驱动器IC SYNCH-RECT BUCK FET DRVR W/REDUCED POR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP6601BCBZ | 制造商:Intersil Corporation 功能描述:MOSFET Driver IC |
| HIP6601BCBZA | 功能描述:功率驱动器IC W/ANNEAL SYNCH-RECT BUCK FET DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。