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参数资料
| 型号： | HIP6601BECB-T |
| 厂商： | INTERSIL CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | CONNECTOR |
| 中文描述： | 0.73 A HALF BRDG BASED MOSFET DRIVER, PDSO8 |
| 封装： | PLASTIC, EPSOIC-8 |
| 文件页数： | 4/11页 |
| 文件大小： | 346K |
| 代理商： | HIP6601BECB-T |
4
FN9072.7
July 20, 2005
Absolute Maximum Ratings
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15V
Supply Voltage (PVCC) . . . . . . . . . . . . . . . . . . . . . . . . . VCC + 0.3V
BOOT Voltage (V
BOOT
- V
PHASE
) . . . . . . . . . . . . . . . . . . . . . . .15V
Input Voltage (V
PWM
) . . . . . . . . . . . . . . . . . . . . . .GND - 0.3V to 7V
UGATE. . . . . . .V
PHASE
- 5V(<400ns pulse width) to V
BOOT
+ 0.3V
. . . . . . . . . . . .V
PHASE
-0.3V(>400ns pulse width) to V
BOOT
+ 0.3V
LGATE. . . . . . . . . GND - 5V(<400ns pulse width) to V
PVCC
+ 0.3V
. . . . . . . . . . . . . . GND -0.3V(>400ns pulse width) to V
PVCC
+ 0.3V
PHASE. . . . . . . . . . . . . . . . . . GND -5V(<400ns pulse width) to 15V
. . . . . . . . . . . . . . . . . . . . . . .GND -0.3V(>400ns pulse width) to 15V
ESD Rating
Human Body Model (Per MIL-STD-883 Method 3015.7). . . . .3kV
Machine Model (Per EIAJ ED-4701 Method C-111) . . . . . . .200V
Thermal Information
Thermal Resistance
SOIC Package (Note 1) . . . . . . . . . . . .
EPSOIC Package (Note 2). . . . . . . . . .
QFN Package (Note 2). . . . . . . . . . . . .
Maximum Junction Temperature (Plastic Package) . . . . . . . .150
°
C
Maximum Storage Temperature Range . . . . . . . . . .-65
°
C to 150
°
C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . .300
°
C
(SOIC - Lead Tips Only)
For Recommended soldering conditions see Tech Brief TB389.
θ
JA
(
°
C/W)
97
38
48
θ
JC
(
°
C/W)
N/A
N/A
10
Operating Conditions
Ambient Temperature Range . . . . . . . . . . . . . . . . . . . . 0
°
C to 85
°
C
Maximum Operating Junction Temperature . . . . . . . . . . . . . 125
°
C
Supply Voltage, VCC. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
±
10%
Supply Voltage Range, PVCC . . . . . . . . . . . . . . . . . . . . . 5V to 12V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1.
θ
JA
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
2.
θ
JA
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features.
θ
JC,
the
“case temp” is measured at the center of the exposed metal pad on the package underside. See Tech Brief TB379.
Electrical Specifications
Recommended Operating Conditions, Unless Otherwise Noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
VCC SUPPLY CURRENT
Bias Supply Current
I
VCC
HIP6601B, f
PWM
= 1MHz, V
PVCC
= 12V
HIP6603B, f
PWM
= 1MHz, V
PVCC
= 12V
HIP6601B, f
PWM
= 1MHz, V
PVCC
= 12V
HIP6603B, f
PWM
= 1MHz, V
PVCC
= 12V
-
4.4
6.2
mA
-
2.5
3.6
mA
Upper Gate Bias Current
I
PVCC
-
200
430
μ
A
-
1.8
3.3
mA
POWER-ON RESET
VCC Rising Threshold
9.7
9.95
10.4
V
VCC Falling Threshold
7.3
7.6
8.0
V
PWM INPUT
Input Current
I
PWM
V
PWM
= 0V or 5V (See
Block Diagram
)
-
500
-
μ
A
PWM Rising Threshold
-
3.6
-
V
PWM Falling Threshold
-
1.45
-
V
UGATE Rise Time
t
RUGATE
t
RLGATE
t
FUGATE
t
FLGATE
t
PDLUGATE
t
PDLLGATE
V
PVCC
= 12V, 3nF Load
V
PVCC
= 12V, 3nF Load
V
PVCC
= 12V, 3nF Load
V
PVCC
= 12V, 3nF Load
V
PVCC
= 12V, 3nF Load
V
PVCC
= 12V, 3nF Load
-
20
-
ns
LGATE Rise Time
-
50
-
ns
UGATE Fall Time
-
20
-
ns
LGATE Fall Time
-
20
-
ns
UGATE Turn-Off Propagation Delay
-
30
-
ns
LGATE Turn-Off Propagation Delay
-
20
-
ns
Shutdown Window
1.4
-
3.6
V
Shutdown Holdoff Time
-
230
-
ns
OUTPUT
Upper Drive Source Impedance
R
UGATE
V
PVCC
= 5V
V
PVCC
= 12V
V
PVCC
= 5V
V
PVCC
= 12V
V
PVCC
= 5V
V
PVCC
= 12V
V
PVCC
= 5V
-
1.7
3.0
-
3.0
5.0
Upper Drive Sink Impedance
R
UGATE
-
2.3
4.0
-
1.1
2.0
Lower Drive Source Current
Equivalent Drive Source Impedance
I
LGATE
R
LGATE
R
LGATE
400
580
-
mA
500
730
-
mA
-
9
-
Lower Drive Sink Impedance
V
PVCC
= 5V or 12V
-
1.6
4.0
HIP6601B, HIP6603B, HIP6604B
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相关代理商/技术参数 |
参数描述 |
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| HIP6601BECBZ | 功能描述:功率驱动器IC SYNCHRONUSCTIFIED BUCK MSFT DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP6601BECBZA | 功能描述:功率驱动器IC W/ANNEAL SYNCHRONUSC BUCK MSFT DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP6601BECBZA-T | 功能描述:功率驱动器IC W/ANNEAL SYNCHRONUSC BUCK MSFT DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP6601BECBZ-T | 功能描述:功率驱动器IC SYNCHRONUSCTIFIED BUCK MSFT DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP6601CB | 制造商:Rochester Electronics LLC 功能描述:SYNCHRONUS-RECTIFIED BUCK MOSFET DRIVER - Bulk |
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