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| 型号： | HIP6601BECB-T |
| 厂商： | INTERSIL CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | CONNECTOR |
| 中文描述： | 0.73 A HALF BRDG BASED MOSFET DRIVER, PDSO8 |
| 封装： | PLASTIC, EPSOIC-8 |
| 文件页数： | 9/11页 |
| 文件大小： | 346K |
| 代理商： | HIP6601BECB-T |
9
FN9072.7
July 20, 2005
HIP6601B, HIP6603B, HIP6604B
Small Outline Exposed Pad Plastic Packages (EPSOIC)
INDEX
AREA
E
D
N
1
2
3
-B-
0.25(0.010)
C A
M
B S
e
-A-
L
B
M
-C-
A1
A
SEATING PLANE
0.10(0.004)
h x 45
o
C
H
0.25(0.010)
B
M
M
α
P1
1
2
3
P
BOTTOM VIEW
N
TOP VIEW
SIDE VIEW
M8.15B
8 LEAD NARROW BODY SMALL OUTLINE EXPOSED PAD
PLASTIC PACKAGE
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.056
0.066
1.43
1.68
-
A1
0.001
0.005
0.03
0.13
-
B
0.0138
0.0192
0.35
0.49
9
C
0.0075
0.0098
0.19
0.25
-
D
0.189
0.196
4.80
4.98
3
E
0.150
0.157
3.31
3.39
4
e
0.050 BSC
1.27 BSC
-
H
0.230
0.244
5.84
6.20
-
h
0.010
0.016
0.25
0.41
5
L
0.016
0.035
0.41
0.64
6
N
α
8
8
7
0°
8°
0°
8°
-
P
-
0.094
-
2.387
11
P1
-
0.094
-
2.387
11
Rev. 3 6/05
NOTES:
1. Symbols are defined in the “MO Series Symbol List” in Section
2.2 of Publication Number 95.
2. Dimensioning and tolerancing per ANSI Y14.5M
-
1982.
3. Dimension “D” does not include mold flash, protrusions or gate
burrs. Mold flash, protrusion and gate burrs shall not exceed
0.15mm (0.006 inch) per side.
4. Dimension “E” does not include interlead flash or protrusions.
Interlead flash and protrusions shall not exceed 0.25mm (0.010
inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual
index feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater
above the seating plane, shall not exceed a maximum value of
0.61mm (0.024 inch).
10. Controlling dimension: MILLIMETER. Converted inch
dimensions are not necessarily exact.
11. Dimensions “P” and “P1” are thermal and/or electrical enhanced
variations. Values shown are maximum size of exposed pad
within lead count and body size.
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相关代理商/技术参数 |
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| HIP6601BECBZ | 功能描述:功率驱动器IC SYNCHRONUSCTIFIED BUCK MSFT DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP6601BECBZA | 功能描述:功率驱动器IC W/ANNEAL SYNCHRONUSC BUCK MSFT DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP6601BECBZA-T | 功能描述:功率驱动器IC W/ANNEAL SYNCHRONUSC BUCK MSFT DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP6601BECBZ-T | 功能描述:功率驱动器IC SYNCHRONUSCTIFIED BUCK MSFT DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP6601CB | 制造商:Rochester Electronics LLC 功能描述:SYNCHRONUS-RECTIFIED BUCK MOSFET DRIVER - Bulk |
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