参数资料
型号: HIP6603BCB-T
厂商: Intersil
文件页数: 10/12页
文件大小: 0K
描述: IC DRIVER MOSFET SYNC BUCK 8SOIC
标准包装: 2,500
配置: 高端和低端,同步
输入类型: PWM
电流 - 峰: 400mA
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 15V
电源电压: 10.8 V ~ 13.2 V
工作温度: 0°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 带卷 (TR)
HIP6601B, HIP6603B, HIP6604B
Small Outline Exposed Pad Plastic Packages (EPSOIC)
N
M8.15B
INDEX
AREA
E
H
0.25(0.010) M
B M
8 LEAD NARROW BODY SMALL OUTLINE EXPOSED PAD
PLASTIC PACKAGE
INCHES
MILLIMETERS
-B-
SYMBOL
MIN
MAX
MIN
MAX
NOTES
1
2
3
A
0.056
0.066
1.43
1.68
-
A1
0.001
0.005
0.03
0.13
-
TOP VIEW
SEATING PLANE
L
B
C
D
E
0.0138
0.0075
0.189
0.150
0.0192
0.0098
0.196
0.157
0.35
0.19
4.80
3.81
0.49
0.25
4.98
3.99
9
-
3
4
-A-
D
A
h x 45 o
e
H
0.050 BSC
0.230
0.244
1.27 BSC
5.84
6.20
-
-
-C-
α
h
0.010
0.016
0.25
0.41
5
e
B
0.25(0.010) M
C A M
B S
A1
0.10(0.004)
C
L
N
α
0.016
8
0.035
0.41
8
0.89
6
7
-
P
-
0.094
-
2.387
11
SIDE VIEW
P1
-
0.094
-
2.387
11
Rev. 5 8/10
NOTES:
1
2
3
1. Symbols are defined in the “MO Series Symbol List” in Section
2.2 of Publication Number 95.
N
P
BOTTOM VIEW
P1
10
2. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
3. Dimension “D” does not include mold flash, protrusions or gate
burrs. Mold flash, protrusion and gate burrs shall not exceed
0.15mm (0.006 inch) per side.
4. Dimension “E” does not include interlead flash or protrusions.
Interlead flash and protrusions shall not exceed 0.25mm (0.010
inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual
index feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater
above the seating plane, shall not exceed a maximum value of
0.61mm (0.024 inch).
10. Controlling dimension: INCH. Converted millimeter dimensions
are not necessarily exact.
11. Dimensions “P” and “P1” are thermal and/or electrical enhanced
variations. Values shown are maximum size of exposed pad
within lead count and body size.
FN9072.8
May 1, 2012
相关PDF资料
PDF描述
RKZ-1205S CONV DC/DC 2W SGL 5V OUT SIP7
B250-13 DIODE SCHOTTKY 50V 2A SMB
HIP6603BCB IC DRIVER MOSFET SYNC BUCK 8SOIC
RKZ-0515S CONV DC/DC 2W 05VIN 15VOUT
GBA15DTKN-S288 CONN EDGECARD 30POS .125 EXTEND
相关代理商/技术参数
参数描述
HIP6603BCBZ 功能描述:功率驱动器IC SYNCHCT BUCK MSFT DRVR FLEXIBLE G RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
HIP6603BCBZ-T 功能描述:功率驱动器IC SYNCHCT BUCK MOS DRVR FLEXIBLE GATE RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
HIP6603BECB 功能描述:IC DRIVER MOSF SYNC BUCK 8EPSOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大(自引导启动):- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6,D²Pak(5 引线+接片),TO-263BA 供应商设备封装:TO-263 包装:管件
HIP6603BECB-T 功能描述:IC DRIVER MOSF SYNC BUCK 8EPSOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大(自引导启动):- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6,D²Pak(5 引线+接片),TO-263BA 供应商设备封装:TO-263 包装:管件
HIP6603BECBZ 功能描述:功率驱动器IC SYNCHRONUSCTIFIED BUCK MSFT DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube