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参数资料
| 型号： | HIP6603BCBZ |
| 厂商： | Intersil |
| 文件页数： | 6/12页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSFET SYNC BUCK 8SOIC |
| 标准包装： | 980 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 电流 - 峰： | 400mA |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 15V |
| 电源电压： | 10.8 V ~ 13.2 V |
| 工作温度： | 0°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
HIP6601B, HIP6603B, HIP6604B
Functional Pin Description
UGATE (Pin 1), (Pin 16 QFN)
Upper gate drive output. Connect to gate of high-side power N-
Channel MOSFET.
BOOT (Pin 2), (Pin 2 QFN)
Floating bootstrap supply pin for the upper gate drive. Connect a
bootstrap capacitor between this pin and the PHASE pin. The
bootstrap capacitor provides the charge to turn on the upper
MOSFET. A resistor in series with boot capacitor is required in
certain applications to reduce ringing on the BOOT pin. See
“Internal Bootstrap Device” on page 7 for guidance in choosing
the appropriate capacitor and resistor values.
PWM (Pin 3), (Pin 3 QFN)
The PWM signal is the control input for the driver. The PWM signal
can enter three distinct states during operation, see the “Three-State
PWM Input” on page 7 for further details. Connect this pin to the
PWM output of the controller.
GND (Pin 4), (Pin 4 QFN)
Bias and reference ground. All signals are referenced to this
node.
PGND (Pin 5 QFN Package Only)
This pin is the power ground return for the lower gate driver.
LGATE (Pin 5), (Pin 7 QFN)
Lower gate drive output. Connect to gate of the low-side power N-
Channel MOSFET.
VCC (Pin 6), (Pin 9 QFN)
Connect this pin to a +12V bias supply. Place a high quality bypass
capacitor from this pin to GND.
LVCC (Pin 10 QFN Package Only)
Timing Diagram
Lower gate driver supply voltage.
PVCC (Pin 7), (Pin 11 QFN)
For the HIP6601B and the HIP6604B, this pin supplies the upper gate
drive bias. Connect this pin from +12V down to +5V.
For the HIP6603B, this pin supplies both the upper and lower gate
drive bias. Connect this pin to either +12V or +5V.
PHASE (Pin 8), (Pin 14 QFN)
Connect this pin to the source of the upper MOSFET and the drain
of the lower MOSFET. The PHASE voltage is monitored for
adaptive shoot-through protection. This pin also provides a return
path for the upper gate drive.
Description
Operation
Designed for versatility and speed, the HIP6601B, HIP6603B and
HIP6604B dual MOSFET drivers control both high-side and low-
side N-Channel FETs from one externally provided PWM signal.
The upper and lower gates are held low until the driver is
initialized. Once the VCC voltage surpasses the VCC Rising
Threshold (See “Electrical Specifications” on page 4), the PWM
signal takes control of gate transitions. A rising edge on PWM
initiates the turn-off of the lower MOSFET (see “Timing Diagram”
on page 6). After a short propagation delay [t PDLLGATE ], the
lower gate begins to fall. Typical fall times [t FLGATE ] are
provided in the “Electrical Specifications” on page 4. Adaptive
shoot-through circuitry monitors the LGATE voltage and
determines the upper gate delay time [t PDHUGATE ] based on how
quickly the LGATE voltage drops below 2.2V. This prevents both
the lower and upper MOSFETs from conducting simultaneously or
shoot-through. Once this delay period is complete the upper gate
drive begins to rise [t RUGATE ] and the upper MOSFET turns on.
PWM
t PDHUGATE
t PDLUGATE
t RUGATE
t FUGATE
UGATE
LGATE
t PDLLGATE
t FLGATE
6
t PDHLGATE
t RLGATE
FN9072.8
May 1, 2012
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相关代理商/技术参数 |
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| HIP6603BCBZ-T | 功能描述:功率驱动器IC SYNCHCT BUCK MOS DRVR FLEXIBLE GATE RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP6603BECB | 功能描述:IC DRIVER MOSF SYNC BUCK 8EPSOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| HIP6603BECB-T | 功能描述:IC DRIVER MOSF SYNC BUCK 8EPSOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| HIP6603BECBZ | 功能描述:功率驱动器IC SYNCHRONUSCTIFIED BUCK MSFT DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP6603BECBZ-T | 功能描述:功率驱动器IC SYNCCTIFIED BUCK MSFT DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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