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| 型号： | HIP6603BCBZ |
| 厂商： | Intersil |
| 文件页数： | 7/12页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSFET SYNC BUCK 8SOIC |
| 标准包装： | 980 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 电流 - 峰： | 400mA |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 15V |
| 电源电压： | 10.8 V ~ 13.2 V |
| 工作温度： | 0°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
HIP6601B, HIP6603B, HIP6604B
A falling transition on PWM indicates the turn-off of the upper
MOSFET and the turn-on of the lower MOSFET. A short
propagation delay [t PDLUGATE ] is encountered before the upper
The bootstrap capacitor must have a maximum voltage rating
above VCC + 5V. The bootstrap capacitor can be chosen from the
following equation:
C BOOT ≥ ------------------------
gate begins to fall [t FUGATE ]. Again, the adaptive shoot-through
circuitry determines the lower gate delay time, t PDHLGATE . The
PHASE voltage is monitored and the lower gate is allowed to rise
Q GATE
Δ V BOOT
(EQ. 1)
after PHASE drops below 0.5V. The lower gate then rises
[t RLGATE ], turning on the lower MOSFET.
Three-State PWM Input
A unique feature of the HIP660X drivers is the addition of a
shutdown window to the PWM input. If the PWM signal enters
and remains within the shutdown window for a set holdoff time,
the output drivers are disabled and both MOSFET gates are pulled
and held low. The shutdown state is removed when the PWM
signal moves outside the shutdown window. Otherwise, the PWM
rising and falling thresholds outlined in the Electrical
Specifications determine when the lower and upper gates are
enabled.
Adaptive Shoot-Through Protection
Both drivers incorporate adaptive shoot-through protection to
prevent upper and lower MOSFETs from conducting
simultaneously and shorting the input supply. This is accomplished
by ensuring the falling gate has turned off one MOSFET before the
other is allowed to rise.
During turn-off of the lower MOSFET, the LGATE voltage is
monitored until it reaches a 2.2V threshold, at which time the
UGATE is released to rise. Adaptive shoot-through circuitry
monitors the PHASE voltage during UGATE turn-off. Once
PHASE has dropped below a threshold of 0.5V, the LGATE is
allowed to rise. PHASE continues to be monitored during the
lower gate rise time. If PHASE has not dropped below 0.5V within
250ns, LGATE is taken high to keep the bootstrap capacitor
charged. If the PHASE voltage exceeds the 0.5V threshold during
this period and remains high for longer than 2 μ s, the LGATE
transitions low. Both upper and lower gates are then held low until
the next rising edge of the PWM signal.
Power-On Reset (POR) Function
During initial start-up, the VCC voltage rise is monitored and gate
drives are held low until a typical VCC rising threshold of 9.95V is
reached. Once the rising VCC threshold is exceeded, the PWM
input signal takes control of the gate drives. If VCC drops below a
typical VCC falling threshold of 7.6V during operation, then both
gate drives are again held low. This condition persists until the
VCC voltage exceeds the VCC rising threshold.
Internal Bootstrap Device
The HIP6601B, HIP6603B, and HIP6604B drivers all feature an
internal bootstrap device. Simply adding an external capacitor
across the BOOT and PHASE pins completes the bootstrap circuit.
7
Where Q GATE is the amount of gate charge required to fully
charge the gate of the upper MOSFET. The Δ V BOOT term is
defined as the allowable droop in the rail of the upper drive.
As an example, suppose a HUF76139 is chosen as the upper
MOSFET. The gate charge, Q GATE , from the data sheet is 65nC
for a 10V upper gate drive. We will assume a 200mV droop in
drive voltage over the PWM cycle. We find that a bootstrap
capacitance of at least 0.325 μ F is required. The next larger
standard value capacitance is 0.33 μ F.
In applications which require down conversion from +12V or
higher and PVCC is connected to a +12V source, a boot resistor in
series with the boot capacitor is required. The increased power
density of these designs tend to lead to increased ringing on the
BOOT and PHASE nodes, due to faster switching of larger
currents across given circuit parasitic elements. The addition of the
boot resistor allows for tuning of the circuit until the peak ringing
on BOOT is below 29V from BOOT to GND and 17V from BOOT
to VCC. A boot resistor value of 5 Ω typically meets this criteria.
In some applications, a well tuned boot resistor reduces the ringing
on the BOOT pin, but the PHASE to GND peak ringing exceeds
17V. A gate resistor placed in the UGATE trace between the
controller and upper MOSFET gate is recommended to reduce the
ringing on the PHASE node by slowing down the upper MOSFET
turn-on. A gate resistor value between 2 Ω to 10 Ω typically reduces
the PHASE to GND peak ringing below 17V.
Gate Drive Voltage Versatility
The HIP6601B and HIP6603B provide the user total flexibility in
choosing the gate drive voltage. The HIP6601B lower gate drive is
fixed to VCC [+12V], but the upper drive rail can range from 12V
down to 5V depending on what voltage is applied to PVCC. The
HIP6603B ties the upper and lower drive rails together. Simply
applying a voltage from 5V up to 12V on PVCC will set both
driver rail voltages.
Power Dissipation
Package power dissipation is mainly a function of the switching
frequency and total gate charge of the selected MOSFETs.
Calculating the power dissipation in the driver for a desired
application is critical to ensuring safe operation. Exceeding the
maximum allowable power dissipation level will push the IC
beyond the maximum recommended operating junction
temperature of +125°C. The maximum allowable IC power
dissipation for the SO8 package is approximately 800mW. When
designing the driver into an application, it is recommended that the
following calculation be performed to ensure safe operation at the
FN9072.8
May 1, 2012
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相关代理商/技术参数 |
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| HIP6603BCBZ-T | 功能描述:功率驱动器IC SYNCHCT BUCK MOS DRVR FLEXIBLE GATE RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP6603BECB | 功能描述:IC DRIVER MOSF SYNC BUCK 8EPSOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| HIP6603BECB-T | 功能描述:IC DRIVER MOSF SYNC BUCK 8EPSOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| HIP6603BECBZ | 功能描述:功率驱动器IC SYNCHRONUSCTIFIED BUCK MSFT DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP6603BECBZ-T | 功能描述:功率驱动器IC SYNCCTIFIED BUCK MSFT DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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