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参数资料
| 型号： | HLB1211 |
| 厂商： | HSMC CORP. |
| 英文描述： | NPN Triple Diffused Planar Type High Voltage Transistors |
| 中文描述： | npn型三重扩散平面型高压晶体管 |
| 文件页数： | 1/3页 |
| 文件大小： | 31K |
| 代理商： | HLB1211 |
HI-SINCERITY
MICROELECTRONICS CORP.
HLB121I
NPN Triple Diffused Planar Type High Voltage Transistor
Spec. No. : HE9027-B
Issued Date : 1996.11.06
Revised Date : 2000.11.01
Page No. : 1/3
HSMC Product Specification
Description
The HLB121I is a medium power transistor designed for use in
switching applications.
Features
High breakdown voltage
Low collector saturation voltage
Fast switching speed
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................................... +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C) .................................................................................... 10 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................... 600 V
BVCEO Collector to Emitter Voltage................................................................................. 400 V
BVEBO Emitter to Base Voltage........................................................................................... 6 V
IC Collector Current (DC)............................................................................................... 300 mA
IC Collector Current (Pulse)........................................................................................... 600 mA
IB Base Current (DC)....................................................................................................... 40 mA
IB Base Current (Pulse)................................................................................................. 100 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*hFE1
*hFE2
Min.
600
400
6
-
-
-
-
-
-
8
10
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
10
400
750
1
-
36
Unit
V
V
V
uA
uA
uA
mV
mV
V
Test Conditions
IC=100uA
IC=10mA
IE=10uA
VCB=550V
VCB=400V
VEB=6V
IC=50mA, IB=10mA
IC=100mA, IB=20mA
IC=50mA, IB=10mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
相关PDF资料 |
PDF描述 |
|---|---|
| HLB121A | NPN Triple Diffused Planar Type High Voltage Transistor |
| HLB121D | NPN Triple Diffused Planar Type High Voltage Transistor |
| HLB121J | NPN Triple Diffused Planar Type High Voltage Transistor |
| HLB122D | NPN Triple Diffused Planar Type High Voltage Transistor |
| HLB122I | NPN Triple Diffused Planar Type High Voltage Transistors |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HLB121A | 制造商:HSMC 制造商全称:HSMC 功能描述:NPN Triple Diffused Planar Type High Voltage Transistor |
| HLB121D | 制造商:HSMC 制造商全称:HSMC 功能描述:NPN Triple Diffused Planar Type High Voltage Transistor |
| HLB121I | 制造商:HSMC 制造商全称:HSMC 功能描述:NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR |
| HLB121J | 制造商:HSMC 制造商全称:HSMC 功能描述:NPN Triple Diffused Planar Type High Voltage Transistor |
| HLB122 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR |
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