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参数资料
| 型号： | HMBT2484 |
| 厂商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶体管 |
| 文件页数： | 1/3页 |
| 文件大小： | 26K |
| 代理商： | HMBT2484 |
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT2484
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6847
Issued Date : 1994.07.29
Revised Date : 2002.10.25
Page No. : 1/3
HMBT2484
HSMC Product Specification
Description
Low Noise Transistor.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150
°
C
Junction Temperature.................................................................................................... +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 225 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage......................................................................................... 60 V
VCEO Collector to Emitter Voltage...................................................................................... 60 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current.......................................................................................................... 50 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
Cob
Min.
60
60
6
-
-
-
-
250
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
350
0.95
-
800
6
Unit
V
V
V
nA
nA
mV
V
Test Conditions
IC=10uA
IC=1mA
IE=10uA
VCB=45V
VEB=5V
IC=1mA, IB=0.1mA
IC=1mA, VCE=5V
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCB=5V, f=1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
pF
SOT-23
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