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参数资料
| 型号： | HMBT2907 |
| 厂商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 进步党外延平面晶体管 |
| 文件页数： | 1/3页 |
| 文件大小： | 29K |
| 代理商： | HMBT2907 |
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT2907A
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6821
Issued Date : 1993.06.23
Revised Date : 2002.10.25
Page No. : 1/3
HMBT2907A
HSMC Product Specification
Description
The HMBT2907A is designed for general purpose amplifier and high
-speed switching, medium power switching applications.
Features
Low Collector Saturation Voltage
High Speed Switching
For Complementary Use With NPN Type HMBT2222A
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150
°
C
Junction Temperature.................................................................................................... +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 225 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage........................................................................................ -60 V
VCEO Collector to Emitter Voltage..................................................................................... -60 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current....................................................................................................... -600 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEX
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
Min.
-60
-60
-5
-
-
-
-
-
-
75
100
100
100
50
200
-
Typ.
-
-
-
-
-
-0.2
-0.5
-
-
-
-
-
180
-
-
-
Max.
-
-
-
-10
-50
-0.4
-1.6
-1.3
-2.6
-
-
-
300
-
-
8
Unit
V
V
V
nA
nA
V
V
V
V
Test Conditions
IC=-10uA
IC=-10mA
IC=-10uA
VCB=-50V
VCE=-30V, VBE=-0.5V
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
VCE=-10V, IC=-100uA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-150mA
VCE=-10V, IC=-500mA
VCB=-20V, IC=-50mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
SOT-23
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