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参数资料
| 型号： | HMBT4124 |
| 厂商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶体管 |
| 文件页数： | 1/3页 |
| 文件大小： | 27K |
| 代理商： | HMBT4124 |
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT4124
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6859
Issued Date : 1998.02.01
Revised Date : 2001.10.25
Page No. : 1/3
HMBT4124
HSMC Product Specification
Description
The HMBT4124 is designed for general purpose switching and
amplifier applications.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150
°
C
Junction Temperature.................................................................................................... +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 225 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage......................................................................................... 30 V
VCEO Collector to Emitter Voltage...................................................................................... 25 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current........................................................................................................ 200 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
30
25
5
-
-
-
-
120
60
300
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
50
300
950
360
-
-
4
Unit
V
V
V
nA
nA
mV
mV
Test Conditions
IC=10uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=20V
VEB=3V
IC=50mA, IB=5mA
IC=50mA, IB=5mA
VCE=1V, IC=2mA
VCE=1V, IC=50mA
VCE=20V, IC=10mA, f=1MHz
VCB=5V, IE=0, f=1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
SOT-23
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