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参数资料
| 型号： | HMBT5086 |
| 厂商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 进步党外延平面晶体管 |
| 文件页数： | 1/3页 |
| 文件大小： | 28K |
| 代理商： | HMBT5086 |
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT5086
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6849
Issued Date : 1994.07.29
Revised Date : 2002.10.25
Page No. : 1/3
HMBT5086
HSMC Product Specification
Description
The HMBT5086 is designed for low noise , high gain , general
purpose amplifier applications.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................ 225 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage........................................................................................ -50 V
VCEO Collector to Emitter Voltage..................................................................................... -50 V
VEBO Emitter to Base Voltage............................................................................................. -3 V
IC Collector Current......................................................................................................... -50 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO1
ICBO2
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
-50
-50
-3
-
-
-
-
150
150
150
40
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-10
-50
-300
-850
500
-
-
-
4.0
Unit
V
V
V
nA
nA
mV
mV
Test Conditions
IC=-100uA
IC=-1mA
IE=-10uA
VCB=-10V
VCB=-35V
IC=-10mA, IB=-1mA
IC=-10mA, IB=-1mA
VCE=-5V, IC=-0.1mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-0.5mA, f=100MHz
VCB=-5V, f=100KHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
SOT-23
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| HMBT5551 | 制造商:HSMC 制造商全称:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR(for general purpose applications requiring high Breakdown Voltages ) |
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