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参数资料
| 型号： | HMBT5551 |
| 厂商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR(for general purpose applications requiring high Breakdown Voltages ) |
| 中文描述： | 瑞展晶体管（一般用途的应用需要高击穿电压） |
| 文件页数： | 1/3页 |
| 文件大小： | 31K |
| 代理商： | HMBT5551 |
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT5551
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6838
Issued Date : 1994.07.29
Revised Date : 2002.10.25
Page No. : 1/3
HMBT5551
HSMC Product Specification
Description
The HMBT5551 is designed for general purpose applications
requiring high Breakdown Voltages.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ............................................................................................. -55 + 150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 225 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage....................................................................................... 180 V
VCEO Collector to Emitter Voltage.................................................................................... 160 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current........................................................................................................ 600 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
180
160
6
-
-
-
-
-
-
80
80
30
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
50
0.15
0.2
1
1
-
250
-
300
6
Unit
V
V
V
nA
nA
V
V
V
V
Test Conditions
IC=100uA
IC=1.0mA
IE=10uA
VCB=120V
VEB=4V
IC=10mA, IB=1.0mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
IC=10mA, VCE=10V, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
SOT-23
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