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参数资料
| 型号： | HMBT6429 |
| 厂商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶体管 |
| 文件页数： | 1/3页 |
| 文件大小： | 29K |
| 代理商： | HMBT6429 |
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT6429
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6810
Issued Date : 1998.07.01
Revised Date : 2002.10.25
Page No. : 1/3
HMBT6429
HSMC Product Specification
Description
Amplifier Transistor
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................ 225 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage......................................................................................... 55 V
VCEO Collector to Emitter Voltage...................................................................................... 45 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current........................................................................................................ 200 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
ICBO
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
VBE(on)
*hFE1
*hFE2
*hFE3
*hFE4
fT
Cob
Min.
55
45
-
-
-
-
-
560
500
500
500
500
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
10
100
10
200
600
660
-
1250
-
-
700
3.0
Unit
V
V
nA
nA
nA
mV
mV
mV
Test Conditions
IC=100uA
IC=1mA
VCB=30V
VCE=30V
VEB=5V
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
VCE=5V, IC=1mA
VCE=5V, IC=0.01mA
VCE=5V, IC=0.1mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=1mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
SOT-23
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