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参数资料
| 型号： | HMBT6520 |
| 厂商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 进步党外延平面晶体管 |
| 文件页数： | 1/3页 |
| 文件大小： | 29K |
| 代理商： | HMBT6520 |
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT6520
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT6520 is designed for general purpose applications requiring high
breakdown voltages.
Features
Spec. No. : HE6806
Issued Date : 1996.04.10
Revised Date : 2002.11.29
Page No. : 1/3
HMBT6520
HSMC Product Specification
High Collector-Emitter Breakdown Voltage
Low Collector-Emitter Saturation Voltage
The HMBT6520 is complementary to HMBT6517
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature........................................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................................ +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................................ 225 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ................................................................................................. -350 V
VCEO Collector to Emitter Voltage.............................................................................................. -350 V
VEBO Emitter to Base Voltage ........................................................................................................ -5 V
IC Collector Current ................................................................................................................. -500 mA
IB Base Current ....................................................................................................................... -250 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VCE(sat)4
VBE(on)
*VBE(sat)1
*VBE(sat)2
*VBE(sat)3
*hFE1
*hFE2
*hFE3
*hFE4
*HFE5
fT
Cob
Min.
-350
-350
-5
-
-
-
-
-
-
-
-
-
-
20
30
30
20
15
40
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-50
-50
-300
-350
-500
-1
-2
-750
-850
-900
-
-
200
200
-
200
6
Unit
V
V
V
nA
nA
mV
mV
mV
V
V
mV
mV
mV
Test Conditions
IC=-100uA
IC=-1mA
IE=-10uA
VCB=-250V
VEB=-4V
IC=-10mA, IB=-1mA
IC=-20mA, IB=-2mA
IC=-30mA, IB=-3mA
IC=-50mA, IB=-5mA
VCE=-10V, IC=-100mA
IB=-1mA, IC=-10mA
IB=-2mA, IC=-20mA
IB=-3mA, IC=-30mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-30mA
VCE=-10V, IC=-50mA
VCE=-10V, IC=-100mA
VCE=-20V ,IC=-10mA, f=20MHz
VCB=-20V, f=1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
SOT-23
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